In this paper, a 400H Ã- 256V pixels 20 Mfps global shutter CMOS image sensor having 128 on-chip memories per pixel with improved sensitivity and power consumption performances is demonstrated. Due to the process technology development based on a 1P6M 0.18 μm CMOS image sensor process and the optimization of the signal readout circuitry with decreased supply voltage of 3.3 V, the fill factor, the conversion gain and the readout gain were all improved from the previous chip and an eight times higher light sensitivity and a 50 % decrease of power consumption were achieved simultaneously. The impact of the performance improvements was confirmed to be significant based on the captured movie video of UHS phenomena.
|Number of pages||6|
|Journal||ITE Transactions on Media Technology and Applications|
|Publication status||Published - 2016|
- Burst video capturing
- Ultra high speed CMOS image sensor
- Ultra high speed phenomena