@inproceedings{c688169a769546fb9bf615ce330371f7,
title = "A 24-GHz SiGe-HBT driver amplifier with 40-dB image-rejection",
abstract = "A driver amplifier with a high image-rejection function was developed in 0.18-μm SiGe BiCMOS technology to create a 24-GHz band RF transmitter. The proposed configuration for the driver amplifier uses a notch feedback circuit and a common-emitter amplifier stage and is considered to have a high image-rejection ratio (IRR) and high power-handling capability in the quasi-millimeter-wave frequency region. The driver amplifier obtained a 6.9-dB gain at an operating frequency of 23 GHz and a 40-dB IRR at an image frequency of 16 GHz. Moreover, good largesignal characteristics such as an OP1dB of +0.3 dBm and an OIP3 of +14.5 dBm were achieved simultaneously, while the power consumption was a low 7.2 mW with a 1.5-V power supply.",
keywords = "Driver amplifier, Image-rejection, Notch filter, SiGe HBT",
author = "Toru Masuda and Nobuhiro Shiramizu and Takahiro Nakamura and Katsuyoshi Washio",
year = "2009",
month = dec,
day = "1",
doi = "10.1109/APMC.2009.5384531",
language = "English",
isbn = "9781424428021",
series = "APMC 2009 - Asia Pacific Microwave Conference 2009",
pages = "361--364",
booktitle = "APMC 2009 - Asia Pacific Microwave Conference 2009",
note = "Asia Pacific Microwave Conference 2009, APMC 2009 ; Conference date: 07-12-2009 Through 10-12-2009",
}