TY - GEN
T1 - A 35-GHz 20- μm2 self-aligned PNP technology for ultra-high-speed high-density complementary bipolar ULSIs
AU - Washio, Katsuyoslii
AU - Shimamoto, K. Hiromi
AU - Nakainura, Toliru
N1 - Publisher Copyright:
© 1992 IEEE.
PY - 1992
Y1 - 1992
N2 - An ultra-high-speed high-density self-aligned pup technology for complementary bipolar ULSIs has been developed which is fully compatible wilh the npn process. Low sheet-resistance p+ buried layer and extrinsic n+ polysilicon layer with U-grooved isolation enable transistor size to be sealed down to about 20 μm2. A shallow emitter junction depth of 45 nm and narrow hase width of 30 nm improve maximum cutoff frequency to 35 GHz The power dissipation of pnp pulldown complementary emitter-follower ECL circuit for the loaded ease is calculated lo be reduced to 1/5 compared with the conventional ECL circuit.
AB - An ultra-high-speed high-density self-aligned pup technology for complementary bipolar ULSIs has been developed which is fully compatible wilh the npn process. Low sheet-resistance p+ buried layer and extrinsic n+ polysilicon layer with U-grooved isolation enable transistor size to be sealed down to about 20 μm2. A shallow emitter junction depth of 45 nm and narrow hase width of 30 nm improve maximum cutoff frequency to 35 GHz The power dissipation of pnp pulldown complementary emitter-follower ECL circuit for the loaded ease is calculated lo be reduced to 1/5 compared with the conventional ECL circuit.
UR - http://www.scopus.com/inward/record.url?scp=84975369211&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84975369211&partnerID=8YFLogxK
U2 - 10.1109/VLSIT.1992.200692
DO - 10.1109/VLSIT.1992.200692
M3 - Conference contribution
AN - SCOPUS:84975369211
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - 64
EP - 65
BT - 1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1992 Symposium on VLSI Technology - Digest of Technical Papers, VLSI Technology 1992
Y2 - 2 June 1992 through 4 June 1992
ER -