A 5GHz band low noise and wide tuning range Si-CMOS VCO

Tuan Thanh Ta; Suguru Kameda; Tadashi Takagi; Kazuo Tsubouchi

doi:10.1109/RFIC.2009.5135606

A 5GHz band low noise and wide tuning range Si-CMOS VCO

Tuan Thanh Ta, Suguru Kameda, Tadashi Takagi, Kazuo Tsubouchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Citations (Scopus)

Abstract

In this work, a fully integrated 5GHz Voltage Controlled Oscillator (VCO) is presented. The VCO is designed with 0.18 μm mixed signal Complementary Metal Oxide Semiconductor (CMOS) process of Taiwan Semiconductor Manufactuning Company (TSMC), Limited. To achieve low phase noise, a varactor circuit is designed to cancel effects of 1/f noise and fluctuation of capacitance due to harmonics. The proposed VCO has tuning range from 5.1GHz to 6.1GHz (17.9%) and phase noise of lower than -110.8dBc/Hz at 1MHz offset over the full tuning range. Figure-of-merit-with-tuning-range (FOMT) of the proposed VCO is -182dBc/Hz.

Original language	English
Title of host publication	Proceedings of the 2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009
Pages	571-574
Number of pages	4
DOIs	https://doi.org/10.1109/RFIC.2009.5135606
Publication status	Published - 2009
Externally published	Yes
Event	2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009 - Boston, MA, United States Duration: 2009 Jun 7 → 2009 Jun 9

Publication series

Name	Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)	1529-2517

Other

Other	2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009
Country/Territory	United States
City	Boston, MA
Period	09/6/7 → 09/6/9

Keywords

5GHz
CMOS
Low noise
VCO
Wide tuning range

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/RFIC.2009.5135606

Cite this

A 5GHz band low noise and wide tuning range Si-CMOS VCO. / Ta, Tuan Thanh; Kameda, Suguru; Takagi, Tadashi et al.

Proceedings of the 2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009. 2009. p. 571-574 5135606 (Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ta, TT, Kameda, S, Takagi, T & Tsubouchi, K 2009, A 5GHz band low noise and wide tuning range Si-CMOS VCO. in Proceedings of the 2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009., 5135606, Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, pp. 571-574, 2009 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2009, Boston, MA, United States, 09/6/7. https://doi.org/10.1109/RFIC.2009.5135606

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abstract = "In this work, a fully integrated 5GHz Voltage Controlled Oscillator (VCO) is presented. The VCO is designed with 0.18 μm mixed signal Complementary Metal Oxide Semiconductor (CMOS) process of Taiwan Semiconductor Manufactuning Company (TSMC), Limited. To achieve low phase noise, a varactor circuit is designed to cancel effects of 1/f noise and fluctuation of capacitance due to harmonics. The proposed VCO has tuning range from 5.1GHz to 6.1GHz (17.9%) and phase noise of lower than -110.8dBc/Hz at 1MHz offset over the full tuning range. Figure-of-merit-with-tuning-range (FOMT) of the proposed VCO is -182dBc/Hz.",

keywords = "5GHz, CMOS, Low noise, VCO, Wide tuning range",

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PY - 2009

Y1 - 2009

N2 - In this work, a fully integrated 5GHz Voltage Controlled Oscillator (VCO) is presented. The VCO is designed with 0.18 μm mixed signal Complementary Metal Oxide Semiconductor (CMOS) process of Taiwan Semiconductor Manufactuning Company (TSMC), Limited. To achieve low phase noise, a varactor circuit is designed to cancel effects of 1/f noise and fluctuation of capacitance due to harmonics. The proposed VCO has tuning range from 5.1GHz to 6.1GHz (17.9%) and phase noise of lower than -110.8dBc/Hz at 1MHz offset over the full tuning range. Figure-of-merit-with-tuning-range (FOMT) of the proposed VCO is -182dBc/Hz.

AB - In this work, a fully integrated 5GHz Voltage Controlled Oscillator (VCO) is presented. The VCO is designed with 0.18 μm mixed signal Complementary Metal Oxide Semiconductor (CMOS) process of Taiwan Semiconductor Manufactuning Company (TSMC), Limited. To achieve low phase noise, a varactor circuit is designed to cancel effects of 1/f noise and fluctuation of capacitance due to harmonics. The proposed VCO has tuning range from 5.1GHz to 6.1GHz (17.9%) and phase noise of lower than -110.8dBc/Hz at 1MHz offset over the full tuning range. Figure-of-merit-with-tuning-range (FOMT) of the proposed VCO is -182dBc/Hz.

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KW - Wide tuning range

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A 5GHz band low noise and wide tuning range Si-CMOS VCO

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Keywords

ASJC Scopus subject areas

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