@article{fb3fdb02daa740b4b5d04892572afcdb,
title = "A Broadband On-Chip Bandpass Filter Using Shunt Dual-Layer Meander-Line Resonators",
abstract = "A miniaturized broadband on-chip bandpass filter (BPF) is presented based on shunt dual-layer meander-line resonators and several metal-insulator-metal (MIM) capacitors. To understand the operational mechanism of the proposed BPF structure, it is analyzed using a simplified LC equivalent circuit model for further investigation of the transmission zeros (TZs) distributions. To validate the proposed idea, the BPF with three TZs is implemented in a commercial 0.13- \mu \text{m} SiGe (Bi)-CMOS process. The measured results show that the BPF has a center frequency at 18 GHz with a very broad bandwidth of 66.7%, and the minimum insertion loss within the passband is 2.9 dB. The chip, excluding the GSG pads, is about 0.318 mm \times0.392 mm.",
keywords = "Bandpass filters, broadband, meander-line resonators, on-chip devices, SiGe-based circuits",
author = "Xu, {Kai Da} and Xi Zhu and Yang Yang and Qiang Chen",
note = "Funding Information: Manuscript received August 16, 2020; revised September 26, 2020; accepted September 27, 2020. Date of publication September 29, 2020; date of current version October 23, 2020. This work was supported in part by the FY2019 Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for Research in Japan under Grant P19350 and in part by the Grant-in-Aid for JSPS Research Fellow under Grant JP19F19350. The review of this letter was arranged by Editor Z. Ma. (Corresponding authors: Kai-Da Xu; Xi Zhu.) Kai-Da Xu is with the School of Information and Communications Engineering, Xi{\textquoteright}an Jiaotong University, Xi{\textquoteright}an 710049, China, and also with the Department of Communications Engineering, Tohoku University, Sendai 980-8579, Japan (e-mail: kaidaxu@ieee.org). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",
year = "2020",
month = nov,
doi = "10.1109/LED.2020.3027734",
language = "English",
volume = "41",
pages = "1617--1620",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}