A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory

Eiji Yoshida; Tetsu Tanaka

doi:10.1109/TED.2006.870283

A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory

Eiji Yoshida, Tetsu Tanaka

Research output: Contribution to journal › Article › peer-review

127 Citations (Scopus)

Abstract

A capacitorless one-transistor (1T)-dynamic random-access memory (DRAM) cell using gate-induced drain-leakage (GIDL) current for write operation was demonstrated. Compared with the conventional write operation with impact-ionization (II) current, the write operation with GIDL current achieves power consumption that is lower by four orders of magnitude and a write speed within several nanoseconds. The capacitorless 1T DRAM is the most promising technology for high-performance embedded-DRAM large-scale integration.

Original language	English
Pages (from-to)	692-697
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	53
Issue number	4
DOIs	https://doi.org/10.1109/TED.2006.870283
Publication status	Published - 2006 Apr
Externally published	Yes

Keywords

Dynamic random-access memory (DRAM)
Embedded memory
Floating-body effect
Gate-induced drain leakage (GIDL)
Silicon-on-insulator (SOI)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2006.870283

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@article{4f8356c9366a47a9bd34c8672618e9d6,

title = "A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory",

abstract = "A capacitorless one-transistor (1T)-dynamic random-access memory (DRAM) cell using gate-induced drain-leakage (GIDL) current for write operation was demonstrated. Compared with the conventional write operation with impact-ionization (II) current, the write operation with GIDL current achieves power consumption that is lower by four orders of magnitude and a write speed within several nanoseconds. The capacitorless 1T DRAM is the most promising technology for high-performance embedded-DRAM large-scale integration.",

keywords = "Dynamic random-access memory (DRAM), Embedded memory, Floating-body effect, Gate-induced drain leakage (GIDL), Silicon-on-insulator (SOI)",

author = "Eiji Yoshida and Tetsu Tanaka",

year = "2006",

month = apr,

doi = "10.1109/TED.2006.870283",

language = "English",

volume = "53",

pages = "692--697",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory

AU - Yoshida, Eiji

AU - Tanaka, Tetsu

PY - 2006/4

Y1 - 2006/4

N2 - A capacitorless one-transistor (1T)-dynamic random-access memory (DRAM) cell using gate-induced drain-leakage (GIDL) current for write operation was demonstrated. Compared with the conventional write operation with impact-ionization (II) current, the write operation with GIDL current achieves power consumption that is lower by four orders of magnitude and a write speed within several nanoseconds. The capacitorless 1T DRAM is the most promising technology for high-performance embedded-DRAM large-scale integration.

AB - A capacitorless one-transistor (1T)-dynamic random-access memory (DRAM) cell using gate-induced drain-leakage (GIDL) current for write operation was demonstrated. Compared with the conventional write operation with impact-ionization (II) current, the write operation with GIDL current achieves power consumption that is lower by four orders of magnitude and a write speed within several nanoseconds. The capacitorless 1T DRAM is the most promising technology for high-performance embedded-DRAM large-scale integration.

KW - Dynamic random-access memory (DRAM)

KW - Embedded memory

KW - Floating-body effect

KW - Gate-induced drain leakage (GIDL)

KW - Silicon-on-insulator (SOI)

UR - http://www.scopus.com/inward/record.url?scp=33645751666&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645751666&partnerID=8YFLogxK

U2 - 10.1109/TED.2006.870283

DO - 10.1109/TED.2006.870283

M3 - Article

AN - SCOPUS:33645751666

SN - 0018-9383

VL - 53

SP - 692

EP - 697

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -

A capacitorless 1T-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-speed embedded memory

Abstract

Keywords

ASJC Scopus subject areas

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