TY - GEN
T1 - A CMOS Proximity Capacitance Image Sensor with 16μ m Pixel Pitch, 0.1aF Detection Accuracy and 60 Frames per Second
AU - Yamamoto, M.
AU - Kuroda, R.
AU - Suzuki, M.
AU - Goto, T.
AU - Hamori, H.
AU - Murakami, S.
AU - Yasuda, T.
AU - Sugawa, S.
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2019/1/16
Y1 - 2019/1/16
N2 - A 16μ m pixel pitch 60 frames per second CMOS proximity capacitance image sensor fabricated by a 0.18μ m CMOS process technology is presented. By the introduction of noise cancelling operation, both fixed pattern noise and kTC noise are significantly reduced, resulting in the 0.1aF (10 -19 F) detection accuracy. Proximity capacitance imaging results using the developed sensor are also demonstrated.
AB - A 16μ m pixel pitch 60 frames per second CMOS proximity capacitance image sensor fabricated by a 0.18μ m CMOS process technology is presented. By the introduction of noise cancelling operation, both fixed pattern noise and kTC noise are significantly reduced, resulting in the 0.1aF (10 -19 F) detection accuracy. Proximity capacitance imaging results using the developed sensor are also demonstrated.
UR - http://www.scopus.com/inward/record.url?scp=85061777664&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85061777664&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2018.8614636
DO - 10.1109/IEDM.2018.8614636
M3 - Conference contribution
AN - SCOPUS:85061777664
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 29.1.1-29.1.4
BT - 2018 IEEE International Electron Devices Meeting, IEDM 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 64th Annual IEEE International Electron Devices Meeting, IEDM 2018
Y2 - 1 December 2018 through 5 December 2018
ER -