A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors

Tetsuro Hayashida; Yongxun Liu; Takashi Matsukawa; Kazuhiko Endo; Shinich O'Uchi; Kunihiro Sakamoto; Kenichi Ishii; Junichi Tsukada; Yuki Ishikawa; Hiromi Yamauchi; Eiichi Suzuki; Atsushi Ogura; Meishoku Masahara

doi:10.1143/JJAP.48.05DC01

A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors

Tetsuro Hayashida, Yongxun Liu, Takashi Matsukawa, Kazuhiko Endo, Shinich O'Uchi, Kunihiro Sakamoto, Kenichi Ishii, Junichi Tsukada, Yuki Ishikawa, Hiromi Yamauchi, Eiichi Suzuki, Atsushi Ogura, Meishoku Masahara

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

Sputtered titanium nitride (TiN) metal gates fabricated at different nitrogen gas flow ratios [R_N = N₂/(N₂ + Ar)] from 17 to 100% have systematically been investigated, and the R_N dependence on the electrical characteristics of fabricated TiN metal gate bulk planar metal- oxide-semiconductor field-effect transistors (MOSFETs) and fin-type MOSFETs (FinFETs) are clarified. It is experimentally found that the electrical characteristics of FinFETs such as subthreshold slope (S-slope) and mobility are almost independent of R_N, while those of bulk planar MOSFETs markedly deteriorate with increasing R_N. These experimental results are discussed from the viewpoint of the device structure differences and the direction of energetic nitrogen atoms in sputtering. The threshold voltage (V_th) of FinFETs can be adjusted to about 100 mV by controlling R_N without device performance degradation. These results are very useful in setting an appropriate V_th for TiN gate-last FinFETs.

Original language	English
Pages (from-to)	05DC011-05DC016
Journal	Japanese Journal of Applied Physics
Volume	48
Issue number	5 PART 2
DOIs	https://doi.org/10.1143/JJAP.48.05DC01
Publication status	Published - 2009 May

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Hayashida, T., Liu, Y., Matsukawa, T., Endo, K., O'Uchi, S., Sakamoto, K., Ishii, K., Tsukada, J., Ishikawa, Y., Yamauchi, H., Suzuki, E., Ogura, A., & Masahara, M. (2009). A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors. Japanese Journal of Applied Physics, 48(5 PART 2), 05DC011-05DC016. https://doi.org/10.1143/JJAP.48.05DC01

Hayashida, Tetsuro ; Liu, Yongxun ; Matsukawa, Takashi et al. / A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 5 PART 2. pp. 05DC011-05DC016.

@article{391eb4648fd84d509fa8bf017af89fcb,

title = "A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors",

abstract = "Sputtered titanium nitride (TiN) metal gates fabricated at different nitrogen gas flow ratios [RN = N2/(N2 + Ar)] from 17 to 100% have systematically been investigated, and the RN dependence on the electrical characteristics of fabricated TiN metal gate bulk planar metal- oxide-semiconductor field-effect transistors (MOSFETs) and fin-type MOSFETs (FinFETs) are clarified. It is experimentally found that the electrical characteristics of FinFETs such as subthreshold slope (S-slope) and mobility are almost independent of RN, while those of bulk planar MOSFETs markedly deteriorate with increasing RN. These experimental results are discussed from the viewpoint of the device structure differences and the direction of energetic nitrogen atoms in sputtering. The threshold voltage (Vth) of FinFETs can be adjusted to about 100 mV by controlling RN without device performance degradation. These results are very useful in setting an appropriate Vth for TiN gate-last FinFETs.",

author = "Tetsuro Hayashida and Yongxun Liu and Takashi Matsukawa and Kazuhiko Endo and Shinich O'Uchi and Kunihiro Sakamoto and Kenichi Ishii and Junichi Tsukada and Yuki Ishikawa and Hiromi Yamauchi and Eiichi Suzuki and Atsushi Ogura and Meishoku Masahara",

year = "2009",

month = may,

doi = "10.1143/JJAP.48.05DC01",

language = "English",

volume = "48",

pages = "05DC011--05DC016",

journal = "Japanese Journal of Applied Physics",

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Hayashida, T, Liu, Y, Matsukawa, T, Endo, K, O'Uchi, S, Sakamoto, K, Ishii, K, Tsukada, J, Ishikawa, Y, Yamauchi, H, Suzuki, E, Ogura, A & Masahara, M 2009, 'A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors', Japanese Journal of Applied Physics, vol. 48, no. 5 PART 2, pp. 05DC011-05DC016. https://doi.org/10.1143/JJAP.48.05DC01

A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors. / Hayashida, Tetsuro; Liu, Yongxun; Matsukawa, Takashi et al.
In: Japanese Journal of Applied Physics, Vol. 48, No. 5 PART 2, 05.2009, p. 05DC011-05DC016.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors

AU - Hayashida, Tetsuro

AU - Liu, Yongxun

AU - Matsukawa, Takashi

AU - Endo, Kazuhiko

AU - O'Uchi, Shinich

AU - Sakamoto, Kunihiro

AU - Ishii, Kenichi

AU - Tsukada, Junichi

AU - Ishikawa, Yuki

AU - Yamauchi, Hiromi

AU - Suzuki, Eiichi

AU - Ogura, Atsushi

AU - Masahara, Meishoku

PY - 2009/5

Y1 - 2009/5

N2 - Sputtered titanium nitride (TiN) metal gates fabricated at different nitrogen gas flow ratios [RN = N2/(N2 + Ar)] from 17 to 100% have systematically been investigated, and the RN dependence on the electrical characteristics of fabricated TiN metal gate bulk planar metal- oxide-semiconductor field-effect transistors (MOSFETs) and fin-type MOSFETs (FinFETs) are clarified. It is experimentally found that the electrical characteristics of FinFETs such as subthreshold slope (S-slope) and mobility are almost independent of RN, while those of bulk planar MOSFETs markedly deteriorate with increasing RN. These experimental results are discussed from the viewpoint of the device structure differences and the direction of energetic nitrogen atoms in sputtering. The threshold voltage (Vth) of FinFETs can be adjusted to about 100 mV by controlling RN without device performance degradation. These results are very useful in setting an appropriate Vth for TiN gate-last FinFETs.

AB - Sputtered titanium nitride (TiN) metal gates fabricated at different nitrogen gas flow ratios [RN = N2/(N2 + Ar)] from 17 to 100% have systematically been investigated, and the RN dependence on the electrical characteristics of fabricated TiN metal gate bulk planar metal- oxide-semiconductor field-effect transistors (MOSFETs) and fin-type MOSFETs (FinFETs) are clarified. It is experimentally found that the electrical characteristics of FinFETs such as subthreshold slope (S-slope) and mobility are almost independent of RN, while those of bulk planar MOSFETs markedly deteriorate with increasing RN. These experimental results are discussed from the viewpoint of the device structure differences and the direction of energetic nitrogen atoms in sputtering. The threshold voltage (Vth) of FinFETs can be adjusted to about 100 mV by controlling RN without device performance degradation. These results are very useful in setting an appropriate Vth for TiN gate-last FinFETs.

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SN - 0021-4922

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SP - 05DC011-05DC016

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

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ER -

Hayashida T, Liu Y, Matsukawa T, Endo K, O'Uchi S, Sakamoto K et al. A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors. Japanese Journal of Applied Physics. 2009 May;48(5 PART 2):05DC011-05DC016. doi: 10.1143/JJAP.48.05DC01

A comparative study of nitrogen gas flow ratio dependence on the electrical characteristics of sputtered titanium nitride gate bulk planar metal-oxide-semiconductor field-effect transistors and fin-type metal-oxide-semiconductor field-effect transistors

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