TY - JOUR
T1 - A comprehensive study of charge trapping in organic field-effect devices with promising semiconductors and different contact metals by displacement current measurements
AU - Bisoyi, Sibani
AU - Rödel, Reinhold
AU - Zschieschang, Ute
AU - Kang, Myeong Jin
AU - Takimiya, Kazuo
AU - Klauk, Hagen
AU - Tiwari, Shree Prakash
N1 - Publisher Copyright:
© 2016 IOP Publishing Ltd.
PY - 2015/12/21
Y1 - 2015/12/21
N2 - A systematic and comprehensive study on the charge-carrier injection and trapping behavior was performed using displacement current measurements in long-channel capacitors based on four promising small-molecule organic semiconductors (pentacene, DNTT, C10-DNTT and DPh-DNTT). In thin-film transistors, these semiconductors showed charge-carrier mobilities ranging from 1.0 to 7.8 cm2 V-1 s-1. The number of charges injected into and extracted from the semiconductor and the density of charges trapped in the device during each measurement were calculated from the displacement current characteristics and it was found that the density of trapped charges is very similar in all devices and of the order 1012 cm-2, despite the fact that the four semiconductors show significantly different charge-carrier mobilities. The choice of the contact metal (Au, Ag, Cu, Pd) was also found to have no significant effect on the trapping behavior.
AB - A systematic and comprehensive study on the charge-carrier injection and trapping behavior was performed using displacement current measurements in long-channel capacitors based on four promising small-molecule organic semiconductors (pentacene, DNTT, C10-DNTT and DPh-DNTT). In thin-film transistors, these semiconductors showed charge-carrier mobilities ranging from 1.0 to 7.8 cm2 V-1 s-1. The number of charges injected into and extracted from the semiconductor and the density of charges trapped in the device during each measurement were calculated from the displacement current characteristics and it was found that the density of trapped charges is very similar in all devices and of the order 1012 cm-2, despite the fact that the four semiconductors show significantly different charge-carrier mobilities. The choice of the contact metal (Au, Ag, Cu, Pd) was also found to have no significant effect on the trapping behavior.
KW - charge trapping
KW - displacement current measurements
KW - organic semiconductors
KW - thin-film transistors
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U2 - 10.1088/0268-1242/31/2/025011
DO - 10.1088/0268-1242/31/2/025011
M3 - Article
AN - SCOPUS:84955503943
SN - 0268-1242
VL - 31
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 2
M1 - 025011
ER -