A computer analysis of effects of annealing on Inp insulator-semiconductor interface properties using mis c-v curves

The effects of annealing on the distributions of interface states at the I-S interface were investigated by analyzing the C-V characteristics of as-grown and annealed Al₂O₃native oxide/InP MIS capacitors using a self-consistent computer simulation program. It is shown that interface states form a continuum of donor-like and acceptor-like states continuously distributed both in energy and in space. The state density distribution before and after annealing maintains the same functional form, which is U-shaped in energy and exponentially decaying in space.The charge neutrality point dividing donor-like and acceptor-like states occurs at the U-shaped minimum.Annealing reduces the spatial extension of states, the U-shape curvature and the magnitude of density.However, the energy position of the charge neutrality point remains remarkably invariant.