TY - GEN
T1 - A content addressable memory using magnetic domain wall motion cells
AU - Nebashi, R.
AU - Sakimura, N.
AU - Tsuji, Y.
AU - Fukami, S.
AU - Honjo, H.
AU - Saito, S.
AU - Miura, S.
AU - Ishiwata, N.
AU - Kinoshita, K.
AU - Hanyu, T.
AU - Endoh, T.
AU - Kasai, N.
AU - Ohno, H.
AU - Sugibayashi, T.
PY - 2011
Y1 - 2011
N2 - A 5-ns search operation of a spintronic content addressable memory (Spin-CAM) was demonstrated, and the speed was the fastest to date. The CAM macro, with a capacity of 16 kb, was fabricated using 90-nm CMOS and domain wall (DW) motion processes. The operating speed was comparable to that of SRAM-based CAM. We also propose a CAM which has multiple contexts by improving the CAM cell circuit to enhance the SoC's performance. The estimated cell area is 3.5 μm2, which is less than that of an SRAM-based CAM cell, when a four-context CAM is designed.
AB - A 5-ns search operation of a spintronic content addressable memory (Spin-CAM) was demonstrated, and the speed was the fastest to date. The CAM macro, with a capacity of 16 kb, was fabricated using 90-nm CMOS and domain wall (DW) motion processes. The operating speed was comparable to that of SRAM-based CAM. We also propose a CAM which has multiple contexts by improving the CAM cell circuit to enhance the SoC's performance. The estimated cell area is 3.5 μm2, which is less than that of an SRAM-based CAM cell, when a four-context CAM is designed.
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M3 - Conference contribution
AN - SCOPUS:80052658028
SN - 9784863481657
T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers
SP - 300
EP - 301
BT - 2011 Symposium on VLSI Circuits, VLSIC 2011 - Digest of Technical Papers
T2 - 2011 Symposium on VLSI Circuits, VLSIC 2011
Y2 - 15 June 2011 through 17 June 2011
ER -