A correlative analysis between characteristics of FinFETs and SRAM performance

Kazuhiko Endo, Shinichi O'Uchi, Yuki Ishikawa, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


A correlation between the characteristics of the 30-nm $L G fin-shaped field-effect transistors and the static random-access memory performance is precisely studied. By investigating an effect of the V \rm th variation to the static noise margin (SNM) variation of two different memory states of the storage node, it is revealed that the V \rm th variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM. Moreover, the contribution and the severity of each transistor variation to $\sigma\hbox{SNM are clarified.

Original languageEnglish
Article number6168825
Pages (from-to)1345-1352
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number5
Publication statusPublished - 2012 May


  • Fin-shaped field-effect transistor (FinFET)
  • noise margin
  • static random-access memory (SRAM)
  • variability


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