A critical factor to determine the high-temperature creep resistance in cation-doped polycrystalline Al2O3

H. Yoshida; Y. Ikuhara; T. Sakuma

A critical factor to determine the high-temperature creep resistance in cation-doped polycrystalline Al₂O₃

H. Yoshida, Y. Ikuhara, T. Sakuma

Research output: Contribution to journal › Conference article › peer-review

Abstract

A small dopant effect on the high-temperature creep resistance in high-purity, polycrystalline Al₂O₃ is examined by uniaxial compression creep testing in air at temperatures between 1150-1350 °C under the applied stress of 10-200 MPa. High-temperature creep resistance in polycrystalline Al₂O₃ is highly improved by zirconium or lanthanoid ions in the level of about 0.05mol%. High resolution electron microscopy (HREM) and X-ray energy dispersive spectroscopy (EDS) analyse revealed that the dopant cation segregate in grain boundaries, and is likely to influence grain boundary diffusion. This paper aims to show a critical parameter to describe the high-temperature creep rate in cation-doped Al₂O₃.

Original language	English
Pages (from-to)	809-816
Number of pages	8
Journal	Key Engineering Materials
Volume	171-174
Publication status	Published - 2000
Event	Proceedings of the 1999 8th International Conference on Creep and Fracture of Engineering Materials and Structures - Tsukuba, Japan Duration: 1999 Nov 1 → 1999 Nov 5

Keywords

AlO
Creep Resistance
Grain Boundary Segregation
Molecular Orbital Calculations

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "A critical factor to determine the high-temperature creep resistance in cation-doped polycrystalline Al2O3",

abstract = "A small dopant effect on the high-temperature creep resistance in high-purity, polycrystalline Al2O3 is examined by uniaxial compression creep testing in air at temperatures between 1150-1350 °C under the applied stress of 10-200 MPa. High-temperature creep resistance in polycrystalline Al2O3 is highly improved by zirconium or lanthanoid ions in the level of about 0.05mol%. High resolution electron microscopy (HREM) and X-ray energy dispersive spectroscopy (EDS) analyse revealed that the dopant cation segregate in grain boundaries, and is likely to influence grain boundary diffusion. This paper aims to show a critical parameter to describe the high-temperature creep rate in cation-doped Al2O3.",

keywords = "AlO, Creep Resistance, Grain Boundary Segregation, Molecular Orbital Calculations",

author = "H. Yoshida and Y. Ikuhara and T. Sakuma",

year = "2000",

language = "English",

volume = "171-174",

pages = "809--816",

journal = "Key Engineering Materials",

issn = "1013-9826",

publisher = "Trans Tech Publications",

note = "Proceedings of the 1999 8th International Conference on Creep and Fracture of Engineering Materials and Structures ; Conference date: 01-11-1999 Through 05-11-1999",

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TY - JOUR

T1 - A critical factor to determine the high-temperature creep resistance in cation-doped polycrystalline Al2O3

AU - Yoshida, H.

AU - Ikuhara, Y.

AU - Sakuma, T.

PY - 2000

Y1 - 2000

N2 - A small dopant effect on the high-temperature creep resistance in high-purity, polycrystalline Al2O3 is examined by uniaxial compression creep testing in air at temperatures between 1150-1350 °C under the applied stress of 10-200 MPa. High-temperature creep resistance in polycrystalline Al2O3 is highly improved by zirconium or lanthanoid ions in the level of about 0.05mol%. High resolution electron microscopy (HREM) and X-ray energy dispersive spectroscopy (EDS) analyse revealed that the dopant cation segregate in grain boundaries, and is likely to influence grain boundary diffusion. This paper aims to show a critical parameter to describe the high-temperature creep rate in cation-doped Al2O3.

AB - A small dopant effect on the high-temperature creep resistance in high-purity, polycrystalline Al2O3 is examined by uniaxial compression creep testing in air at temperatures between 1150-1350 °C under the applied stress of 10-200 MPa. High-temperature creep resistance in polycrystalline Al2O3 is highly improved by zirconium or lanthanoid ions in the level of about 0.05mol%. High resolution electron microscopy (HREM) and X-ray energy dispersive spectroscopy (EDS) analyse revealed that the dopant cation segregate in grain boundaries, and is likely to influence grain boundary diffusion. This paper aims to show a critical parameter to describe the high-temperature creep rate in cation-doped Al2O3.

KW - AlO

KW - Creep Resistance

KW - Grain Boundary Segregation

KW - Molecular Orbital Calculations

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M3 - Conference article

AN - SCOPUS:0033875864

SN - 1013-9826

VL - 171-174

SP - 809

EP - 816

JO - Key Engineering Materials

JF - Key Engineering Materials

T2 - Proceedings of the 1999 8th International Conference on Creep and Fracture of Engineering Materials and Structures

Y2 - 1 November 1999 through 5 November 1999

ER -

A critical factor to determine the high-temperature creep resistance in cation-doped polycrystalline Al₂O₃

Abstract

Keywords

ASJC Scopus subject areas

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