A dislocation-crystal plasticity simulation on large deformation considering geometrically necessary dislocation density and incompatibility (2nd report, application to FCC single crystal)

In the previous paper, the GN incompatibility is newly defined and a new annihilation term of a dislocation pair due to the dynamic recovery is introduced into an expression of dislocation density. Furthermore, a multiscale model of crystal plasticity is proposed by considering GN dislocation density and incompatibility. However, details of dislocation-crystal plasticity simulation are not given. In this paper, we explain a method of dislocation-crystal plasticity analysis. A finite element simulation is carried out for an f.c.c. single crystal under plane strain tension. It is numerically predicted that micro shear bands are formed at large strain, and sub-GNBs: small angle tilt boundaries are induced along these bands. Furthermore, the annihilation of dislocation pair and the increase of dislocation mean free path characterizing stage III of work-hardening are computationally predicted.