A magnetic-tunnel-junction (MTJ) circuit model, which considers spin dynamics under finite temperature, electrical bias, a stochastic process, and spin-transfer torque, was developed. Switching behaviors simulated by this model were verified by experimental measurements. Moreover, a disturbance-free read scheme for Gbit-scale spin-transfer torque RAM (SPRAM) was also developed. The feasibility of this scheme was confirmed by circuit simulation using the model and on-chip measurement of switching probability.
|Title of host publication||2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest|
|Publication status||Published - 2009|
|Event||2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States|
Duration: 2009 Dec 7 → 2009 Dec 9
|Name||Technical Digest - International Electron Devices Meeting, IEDM|
|Conference||2009 International Electron Devices Meeting, IEDM 2009|
|Period||09/12/7 → 09/12/9|