TY - GEN
T1 - A disturbance-free read scheme and a compact stochastic-spin-dynamics-based MTJ circuit model for Gb-scale SPRAM
AU - Ono, K.
AU - Kawahara, T.
AU - Takemura, R.
AU - Miura, K.
AU - Yamamoto, H.
AU - Yamanouchi, M.
AU - Hayakawa, J.
AU - Ito, K.
AU - Takahashi, H.
AU - Ikeda, S.
AU - Hasegawa, H.
AU - Matsuoka, H.
AU - Ohno, H.
PY - 2009
Y1 - 2009
N2 - A magnetic-tunnel-junction (MTJ) circuit model, which considers spin dynamics under finite temperature, electrical bias, a stochastic process, and spin-transfer torque, was developed. Switching behaviors simulated by this model were verified by experimental measurements. Moreover, a disturbance-free read scheme for Gbit-scale spin-transfer torque RAM (SPRAM) was also developed. The feasibility of this scheme was confirmed by circuit simulation using the model and on-chip measurement of switching probability.
AB - A magnetic-tunnel-junction (MTJ) circuit model, which considers spin dynamics under finite temperature, electrical bias, a stochastic process, and spin-transfer torque, was developed. Switching behaviors simulated by this model were verified by experimental measurements. Moreover, a disturbance-free read scheme for Gbit-scale spin-transfer torque RAM (SPRAM) was also developed. The feasibility of this scheme was confirmed by circuit simulation using the model and on-chip measurement of switching probability.
UR - http://www.scopus.com/inward/record.url?scp=77952348902&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77952348902&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2009.5424382
DO - 10.1109/IEDM.2009.5424382
M3 - Conference contribution
AN - SCOPUS:77952348902
SN - 9781424456406
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 9.3.1-9.3.4
BT - 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
T2 - 2009 International Electron Devices Meeting, IEDM 2009
Y2 - 7 December 2009 through 9 December 2009
ER -