A dynamical power-management demonstration using four-terminal separated-gate FinFETs

K. Endo; Y. Ishikawa; Y. X. Liu; T. Matsukawa; S. O'uchi; K. Ishii; M. Masahara; J. Tsukada; H. Yamauchi; T. Sekigawa; H. Koike; E. Suzuki

doi:10.1109/SOI.2006.284443

A dynamical power-management demonstration using four-terminal separated-gate FinFETs

K. Endo, Y. Ishikawa, Y. X. Liu, T. Matsukawa, S. O'uchi, K. Ishii, M. Masahara, J. Tsukada, H. Yamauchi, T. Sekigawa, H. Koike, E. Suzuki

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

National Institute of Advanced Industrial Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

Dynamically power-controllable CMOS technology has been investigated using separated-gate four-terminal (4T) FinFETs. We demonstrate for the first time that the power consumption of the CMOS inverter can dynamically be controlled using the 4T-FinFET.

Original language	English
Title of host publication	2006 IEEE international SOI Conference Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	81-82
Number of pages	2
ISBN (Print)	1424402905, 9781424402908
DOIs	https://doi.org/10.1109/SOI.2006.284443
Publication status	Published - 2006
Event	2006 IEEE International Silicon on Insulator Conference, SOI - Niagara Falls, NY, United States Duration: 2006 Oct 2 → 2006 Oct 5

Publication series

Name	Proceedings - IEEE International SOI Conference
ISSN (Print)	1078-621X

Conference

Conference	2006 IEEE International Silicon on Insulator Conference, SOI
Country/Territory	United States
City	Niagara Falls, NY
Period	06/10/2 → 06/10/5

Access to Document

10.1109/SOI.2006.284443

Cite this

Endo, K., Ishikawa, Y., Liu, Y. X., Matsukawa, T., O'uchi, S., Ishii, K., Masahara, M., Tsukada, J., Yamauchi, H., Sekigawa, T., Koike, H., & Suzuki, E. (2006). A dynamical power-management demonstration using four-terminal separated-gate FinFETs. In 2006 IEEE international SOI Conference Proceedings (pp. 81-82). Article 4062891 (Proceedings - IEEE International SOI Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SOI.2006.284443

@inproceedings{3cdbfc26ff0545ada2e2dbcf90fe1691,

title = "A dynamical power-management demonstration using four-terminal separated-gate FinFETs",

abstract = "Dynamically power-controllable CMOS technology has been investigated using separated-gate four-terminal (4T) FinFETs. We demonstrate for the first time that the power consumption of the CMOS inverter can dynamically be controlled using the 4T-FinFET.",

author = "K. Endo and Y. Ishikawa and Liu, {Y. X.} and T. Matsukawa and S. O'uchi and K. Ishii and M. Masahara and J. Tsukada and H. Yamauchi and T. Sekigawa and H. Koike and E. Suzuki",

year = "2006",

doi = "10.1109/SOI.2006.284443",

language = "English",

isbn = "1424402905",

series = "Proceedings - IEEE International SOI Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "81--82",

booktitle = "2006 IEEE international SOI Conference Proceedings",

address = "United States",

note = "2006 IEEE International Silicon on Insulator Conference, SOI ; Conference date: 02-10-2006 Through 05-10-2006",

}

Endo, K, Ishikawa, Y, Liu, YX, Matsukawa, T, O'uchi, S, Ishii, K, Masahara, M, Tsukada, J, Yamauchi, H, Sekigawa, T, Koike, H & Suzuki, E 2006, A dynamical power-management demonstration using four-terminal separated-gate FinFETs. in 2006 IEEE international SOI Conference Proceedings., 4062891, Proceedings - IEEE International SOI Conference, Institute of Electrical and Electronics Engineers Inc., pp. 81-82, 2006 IEEE International Silicon on Insulator Conference, SOI, Niagara Falls, NY, United States, 06/10/2. https://doi.org/10.1109/SOI.2006.284443

A dynamical power-management demonstration using four-terminal separated-gate FinFETs. / Endo, K.; Ishikawa, Y.; Liu, Y. X. et al.
2006 IEEE international SOI Conference Proceedings. Institute of Electrical and Electronics Engineers Inc., 2006. p. 81-82 4062891 (Proceedings - IEEE International SOI Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A dynamical power-management demonstration using four-terminal separated-gate FinFETs

AU - Endo, K.

AU - Ishikawa, Y.

AU - Liu, Y. X.

AU - Matsukawa, T.

AU - O'uchi, S.

AU - Ishii, K.

AU - Masahara, M.

AU - Tsukada, J.

AU - Yamauchi, H.

AU - Sekigawa, T.

AU - Koike, H.

AU - Suzuki, E.

PY - 2006

Y1 - 2006

N2 - Dynamically power-controllable CMOS technology has been investigated using separated-gate four-terminal (4T) FinFETs. We demonstrate for the first time that the power consumption of the CMOS inverter can dynamically be controlled using the 4T-FinFET.

AB - Dynamically power-controllable CMOS technology has been investigated using separated-gate four-terminal (4T) FinFETs. We demonstrate for the first time that the power consumption of the CMOS inverter can dynamically be controlled using the 4T-FinFET.

UR - http://www.scopus.com/inward/record.url?scp=43849103959&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43849103959&partnerID=8YFLogxK

U2 - 10.1109/SOI.2006.284443

DO - 10.1109/SOI.2006.284443

M3 - Conference contribution

AN - SCOPUS:43849103959

SN - 1424402905

SN - 9781424402908

T3 - Proceedings - IEEE International SOI Conference

SP - 81

EP - 82

BT - 2006 IEEE international SOI Conference Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2006 IEEE International Silicon on Insulator Conference, SOI

Y2 - 2 October 2006 through 5 October 2006

ER -

A dynamical power-management demonstration using four-terminal separated-gate FinFETs

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this