A fast and low actuation voltage MEMS switch for mm-wave and its integration

Akira Akiba; Shun Mitarai; Shinya Morita; Koichi Ikeda; Steffen Kurth; Stefan Leidich; Andreas Bertz; Markus Nowack; Joerg Froemel; Thomas Gessner

doi:10.1109/IEDM.2010.5703487

A fast and low actuation voltage MEMS switch for mm-wave and its integration

Akira Akiba, Shun Mitarai, Shinya Morita, Koichi Ikeda, Steffen Kurth, Stefan Leidich, Andreas Bertz, Markus Nowack, Joerg Froemel, Thomas Gessner

Micro System Integration Center (μSIC)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Citations (Scopus)

Abstract

A novel mm-wave MEMS single pole single throw (SPST) switch has been developed, which is driven by 5.0 V in 10.3 μs. The insertion loss and the isolation at 60 GHz were 1.2 dB and 18 dB, respectively. A two metal layer silicon interposer technology was also developed. We designed single pole double throw (SPDT) switch module, in which two SPST switch are accommodated on the silicon interposer chip. It consists of 3 μm thick Al wires and 12 μm thick low-k benzocyclobutene (BCB) interlayer dielectrics. They enabled sufficient signal integrity for 60 GHz and higher frequencies.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	36.4.1-36.4.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703487
Publication status	Published - 2010
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 2010 Dec 6 → 2010 Dec 8

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	10/12/6 → 10/12/8

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10.1109/IEDM.2010.5703487

Cite this

Akiba, A., Mitarai, S., Morita, S., Ikeda, K., Kurth, S., Leidich, S., Bertz, A., Nowack, M., Froemel, J., & Gessner, T. (2010). A fast and low actuation voltage MEMS switch for mm-wave and its integration. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 36.4.1-36.4.4). Article 5703487 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703487

@inproceedings{e4728c230ae747229462759d09ea537a,

title = "A fast and low actuation voltage MEMS switch for mm-wave and its integration",

abstract = "A novel mm-wave MEMS single pole single throw (SPST) switch has been developed, which is driven by 5.0 V in 10.3 μs. The insertion loss and the isolation at 60 GHz were 1.2 dB and 18 dB, respectively. A two metal layer silicon interposer technology was also developed. We designed single pole double throw (SPDT) switch module, in which two SPST switch are accommodated on the silicon interposer chip. It consists of 3 μm thick Al wires and 12 μm thick low-k benzocyclobutene (BCB) interlayer dielectrics. They enabled sufficient signal integrity for 60 GHz and higher frequencies.",

author = "Akira Akiba and Shun Mitarai and Shinya Morita and Koichi Ikeda and Steffen Kurth and Stefan Leidich and Andreas Bertz and Markus Nowack and Joerg Froemel and Thomas Gessner",

year = "2010",

doi = "10.1109/IEDM.2010.5703487",

language = "English",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "36.4.1--36.4.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

Akiba, A, Mitarai, S, Morita, S, Ikeda, K, Kurth, S, Leidich, S, Bertz, A, Nowack, M, Froemel, J & Gessner, T 2010, A fast and low actuation voltage MEMS switch for mm-wave and its integration. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703487, Technical Digest - International Electron Devices Meeting, IEDM, pp. 36.4.1-36.4.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 10/12/6. https://doi.org/10.1109/IEDM.2010.5703487

A fast and low actuation voltage MEMS switch for mm-wave and its integration. / Akiba, Akira; Mitarai, Shun; Morita, Shinya et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 36.4.1-36.4.4 5703487 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A fast and low actuation voltage MEMS switch for mm-wave and its integration

AU - Akiba, Akira

AU - Mitarai, Shun

AU - Morita, Shinya

AU - Ikeda, Koichi

AU - Kurth, Steffen

AU - Leidich, Stefan

AU - Bertz, Andreas

AU - Nowack, Markus

AU - Froemel, Joerg

AU - Gessner, Thomas

PY - 2010

Y1 - 2010

N2 - A novel mm-wave MEMS single pole single throw (SPST) switch has been developed, which is driven by 5.0 V in 10.3 μs. The insertion loss and the isolation at 60 GHz were 1.2 dB and 18 dB, respectively. A two metal layer silicon interposer technology was also developed. We designed single pole double throw (SPDT) switch module, in which two SPST switch are accommodated on the silicon interposer chip. It consists of 3 μm thick Al wires and 12 μm thick low-k benzocyclobutene (BCB) interlayer dielectrics. They enabled sufficient signal integrity for 60 GHz and higher frequencies.

AB - A novel mm-wave MEMS single pole single throw (SPST) switch has been developed, which is driven by 5.0 V in 10.3 μs. The insertion loss and the isolation at 60 GHz were 1.2 dB and 18 dB, respectively. A two metal layer silicon interposer technology was also developed. We designed single pole double throw (SPDT) switch module, in which two SPST switch are accommodated on the silicon interposer chip. It consists of 3 μm thick Al wires and 12 μm thick low-k benzocyclobutene (BCB) interlayer dielectrics. They enabled sufficient signal integrity for 60 GHz and higher frequencies.

UR - http://www.scopus.com/inward/record.url?scp=79951817702&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951817702&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2010.5703487

DO - 10.1109/IEDM.2010.5703487

M3 - Conference contribution

AN - SCOPUS:79951817702

SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 36.4.1-36.4.4

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

A fast and low actuation voltage MEMS switch for mm-wave and its integration

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