A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

Hidemi Toyosaki; Tomoteru Fukumura; Kazunori Ueno; Masaki Nakano; Masashi Kawasaki

doi:10.1143/JJAP.44.L896

A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

Hidemi Toyosaki, Tomoteru Fukumura, Kazunori Ueno, Masaki Nakano, Masashi Kawasaki

SCI - Chemistry

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti_1-xCo_xO_2-δ and ferromagnetic metal Fe_0.1Co_0.9 separated by AlO _x barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ∼11% at 15 K, indicating that Ti_1-xCo_xO _2-δ can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.

Original language	English
Pages (from-to)	L896-L898
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	28-32
DOIs	https://doi.org/10.1143/JJAP.44.L896
Publication status	Published - 2005

Keywords

Co-doped TiO
Ferromagnetic semiconductor
Magnetic tunnel junction
Oxide semiconductor
Tunneling magnetoresistance
Wide gap semiconductor

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.44.L896

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title = "A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction",

abstract = "A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-δ and ferromagnetic metal Fe0.1Co0.9 separated by AlO x barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ∼11% at 15 K, indicating that Ti1-xCoxO 2-δ can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.",

keywords = "Co-doped TiO, Ferromagnetic semiconductor, Magnetic tunnel junction, Oxide semiconductor, Tunneling magnetoresistance, Wide gap semiconductor",

author = "Hidemi Toyosaki and Tomoteru Fukumura and Kazunori Ueno and Masaki Nakano and Masashi Kawasaki",

year = "2005",

doi = "10.1143/JJAP.44.L896",

language = "English",

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T1 - A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

AU - Toyosaki, Hidemi

AU - Fukumura, Tomoteru

AU - Ueno, Kazunori

AU - Nakano, Masaki

AU - Kawasaki, Masashi

PY - 2005

Y1 - 2005

N2 - A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-δ and ferromagnetic metal Fe0.1Co0.9 separated by AlO x barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ∼11% at 15 K, indicating that Ti1-xCoxO 2-δ can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.

AB - A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-δ and ferromagnetic metal Fe0.1Co0.9 separated by AlO x barrier showed positive tunneling magnetoresistance (TMR) with a ratio of ∼11% at 15 K, indicating that Ti1-xCoxO 2-δ can be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.

KW - Co-doped TiO

KW - Ferromagnetic semiconductor

KW - Magnetic tunnel junction

KW - Oxide semiconductor

KW - Tunneling magnetoresistance

KW - Wide gap semiconductor

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M3 - Article

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

A ferromagnetic oxide semiconductor as spin injection electrode in magnetic tunnel junction

Abstract

Keywords

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