Using an Al2 O3 gate insulator by atomic layer deposition and air-bridge drain electrode, we fabricated a quantum dot with few electrons based on an In0.56 Ga0.44 As resonant tunneling diode structure. Artificial atomic properties manifested themselves in magnetotransport, enabling the determination of effective electron g factors. Results show that the insulating gate structure used here is effective for realizing quantum dots made of narrow-gap semiconductors for studying spin-related phenomena.
|Journal||Applied Physics Letters|
|Publication status||Published - 2007 Dec 14|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)