A few-electron vertical In0.56Ga0.44As quantum dot with an insulating gate

Tomohiro Kita; D. Chiba; Y. Ohno; Hideo Ohno

doi:10.1063/1.2818712

A few-electron vertical In_0.56Ga_0.44As quantum dot with an insulating gate

Tomohiro Kita, D. Chiba, Y. Ohno, Hideo Ohno

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Using an Al2 O3 gate insulator by atomic layer deposition and air-bridge drain electrode, we fabricated a quantum dot with few electrons based on an In0.56 Ga0.44 As resonant tunneling diode structure. Artificial atomic properties manifested themselves in magnetotransport, enabling the determination of effective electron g factors. Results show that the insulating gate structure used here is effective for realizing quantum dots made of narrow-gap semiconductors for studying spin-related phenomena.

Original language	English
Article number	232101
Journal	Applied Physics Letters
Volume	91
Issue number	23
DOIs	https://doi.org/10.1063/1.2818712
Publication status	Published - 2007 Dec 14

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2818712

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abstract = "Using an Al2 O3 gate insulator by atomic layer deposition and air-bridge drain electrode, we fabricated a quantum dot with few electrons based on an In0.56 Ga0.44 As resonant tunneling diode structure. Artificial atomic properties manifested themselves in magnetotransport, enabling the determination of effective electron g factors. Results show that the insulating gate structure used here is effective for realizing quantum dots made of narrow-gap semiconductors for studying spin-related phenomena.",

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Y1 - 2007/12/14

N2 - Using an Al2 O3 gate insulator by atomic layer deposition and air-bridge drain electrode, we fabricated a quantum dot with few electrons based on an In0.56 Ga0.44 As resonant tunneling diode structure. Artificial atomic properties manifested themselves in magnetotransport, enabling the determination of effective electron g factors. Results show that the insulating gate structure used here is effective for realizing quantum dots made of narrow-gap semiconductors for studying spin-related phenomena.

AB - Using an Al2 O3 gate insulator by atomic layer deposition and air-bridge drain electrode, we fabricated a quantum dot with few electrons based on an In0.56 Ga0.44 As resonant tunneling diode structure. Artificial atomic properties manifested themselves in magnetotransport, enabling the determination of effective electron g factors. Results show that the insulating gate structure used here is effective for realizing quantum dots made of narrow-gap semiconductors for studying spin-related phenomena.

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A few-electron vertical In_0.56Ga_0.44As quantum dot with an insulating gate

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