TY - JOUR
T1 - A first-principles study on the electrical conductivity of Ag2S1- x Sex (x = 0, 0.25, 0.5)
T2 - Electron-phonon coupling
AU - Nam, Ho Ngoc
AU - Suzuki, Katsuhiro
AU - Masago, Akira
AU - Nguyen, Tien Quang
AU - Shinya, Hikari
AU - Fukushima, Tetsuya
AU - Sato, Kazunori
N1 - Funding Information:
This research was supported by Japan Science and Technology Corporation (JST) Centers of Research Excellence in Science and Technology (CREST) (Grant No. JP-MJCR18I2). The author H.N.N. acknowledges financial support from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) and the Research Grant of Japan International Cooperation Agency (JICA) for the Innovative Asia program.
Publisher Copyright:
© 2022 Author(s).
PY - 2022/4/4
Y1 - 2022/4/4
N2 - The development of flexible thermoelectric devices is gradually attracting increasing attention, particularly in the field of material design. In this study, we use first-principles calculations combined with Boltzmann equations to study the electronic and transport properties of Ag2S1-xSex, a key material with many important properties and extraordinary ductility, as well as a wide range of thermoelectric applications. The effect of Se alloying on the electronic structure of Ag2S and defect formation is investigated, and the role of alloying in increasing the n-type carrier concentration is discussed. The electron-phonon coupling approximation is used to reproduce the experimentally observed transport properties reasonably well, which shows that this scattering model is suitable for predicting the transport properties of semiconductors in thermoelectric applications.
AB - The development of flexible thermoelectric devices is gradually attracting increasing attention, particularly in the field of material design. In this study, we use first-principles calculations combined with Boltzmann equations to study the electronic and transport properties of Ag2S1-xSex, a key material with many important properties and extraordinary ductility, as well as a wide range of thermoelectric applications. The effect of Se alloying on the electronic structure of Ag2S and defect formation is investigated, and the role of alloying in increasing the n-type carrier concentration is discussed. The electron-phonon coupling approximation is used to reproduce the experimentally observed transport properties reasonably well, which shows that this scattering model is suitable for predicting the transport properties of semiconductors in thermoelectric applications.
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U2 - 10.1063/5.0086703
DO - 10.1063/5.0086703
M3 - Article
AN - SCOPUS:85128380486
SN - 0003-6951
VL - 120
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 14
M1 - 143903
ER -