A Fitting Model for Asymmetric I-V Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities

Akira Satou; Gen Tamamushi; Kenta Sugawara; Junki Mitsushio; Victor Ryzhii; Taiichi Otsuji

doi:10.1109/TED.2016.2578325

A Fitting Model for Asymmetric I-V Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities

Akira Satou, Gen Tamamushi, Kenta Sugawara, Junki Mitsushio, Victor Ryzhii, Taiichi Otsuji

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Tohoku University

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Abstract

A fitting model is developed for accounting the asymmetric ambipolarities in the I- V characteristics of graphene FETs (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the junctions between the gated and access regions. Using the model, the gate-voltage-dependent intrinsic mobility as well as other intrinsic and extrinsic device parameters can be extracted. We apply it to a top-gated G-FET with a graphene channel grown on a SiC substrate and with SiN gate dielectric that we reported previously, and we demonstrate that it can excellently fit its asymmetric I-V characteristic.

Original language	English
Article number	7497579
Pages (from-to)	3300-3306
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	8
DOIs	https://doi.org/10.1109/TED.2016.2578325
Publication status	Published - 2016

Keywords

Fitting of I-V characteristic
graphene FET (G-FET)
interband tunneling
intrinsic mobility
thermionic emission

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10.1109/TED.2016.2578325

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title = "A Fitting Model for Asymmetric I-V Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities",

abstract = "A fitting model is developed for accounting the asymmetric ambipolarities in the I- V characteristics of graphene FETs (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the junctions between the gated and access regions. Using the model, the gate-voltage-dependent intrinsic mobility as well as other intrinsic and extrinsic device parameters can be extracted. We apply it to a top-gated G-FET with a graphene channel grown on a SiC substrate and with SiN gate dielectric that we reported previously, and we demonstrate that it can excellently fit its asymmetric I-V characteristic.",

keywords = "Fitting of I-V characteristic, graphene FET (G-FET), interband tunneling, intrinsic mobility, thermionic emission",

author = "Akira Satou and Gen Tamamushi and Kenta Sugawara and Junki Mitsushio and Victor Ryzhii and Taiichi Otsuji",

note = "Funding Information: This work was supported by the Japan Society for the Promotion of Science under Grant-in-Aid for Specially Promoted Research 23000008 and Grant-in-Aid for Young Scientists (B) 26820122. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

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T1 - A Fitting Model for Asymmetric I-V Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities

AU - Satou, Akira

AU - Tamamushi, Gen

AU - Sugawara, Kenta

AU - Mitsushio, Junki

AU - Ryzhii, Victor

AU - Otsuji, Taiichi

N1 - Funding Information: This work was supported by the Japan Society for the Promotion of Science under Grant-in-Aid for Specially Promoted Research 23000008 and Grant-in-Aid for Young Scientists (B) 26820122. Publisher Copyright: © 1963-2012 IEEE.

PY - 2016

Y1 - 2016

N2 - A fitting model is developed for accounting the asymmetric ambipolarities in the I- V characteristics of graphene FETs (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the junctions between the gated and access regions. Using the model, the gate-voltage-dependent intrinsic mobility as well as other intrinsic and extrinsic device parameters can be extracted. We apply it to a top-gated G-FET with a graphene channel grown on a SiC substrate and with SiN gate dielectric that we reported previously, and we demonstrate that it can excellently fit its asymmetric I-V characteristic.

AB - A fitting model is developed for accounting the asymmetric ambipolarities in the I- V characteristics of graphene FETs (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the junctions between the gated and access regions. Using the model, the gate-voltage-dependent intrinsic mobility as well as other intrinsic and extrinsic device parameters can be extracted. We apply it to a top-gated G-FET with a graphene channel grown on a SiC substrate and with SiN gate dielectric that we reported previously, and we demonstrate that it can excellently fit its asymmetric I-V characteristic.

KW - Fitting of I-V characteristic

KW - graphene FET (G-FET)

KW - interband tunneling

KW - intrinsic mobility

KW - thermionic emission

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A Fitting Model for Asymmetric I-V Characteristics of Graphene FETs for Extraction of Intrinsic Mobilities

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Keywords

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