A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor with Backside-Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank

Hiroya Shike; Rihito Kuroda; Ryota Kobayashi; Maasa Murata; Yasuyuki Fujihara; Manabu Suzuki; Shoma Harada; Taku Shibaguchi; Naoya Kuriyama; Takaki Hatsui; Jun Miyawaki; Tetsuo Harada; Yuichi Yamasaki; Takeo Watanabe; Yoshihisa Harada; Shigetoshi Sugawa

doi:10.1109/TED.2021.3062576

A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor with Backside-Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank

Hiroya Shike, Rihito Kuroda, Ryota Kobayashi, Maasa Murata, Yasuyuki Fujihara, Manabu Suzuki, Shoma Harada, Taku Shibaguchi, Naoya Kuriyama, Takaki Hatsui, Jun Miyawaki, Tetsuo Harada, Yuichi Yamasaki, Takeo Watanabe, Yoshihisa Harada, Shigetoshi Sugawa

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

This article presents a prototype 22.4~mu text{m} pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with a 45-mu text{m} thick Si substrate were introduced for low noise and high radiation hardness to high energy photons. Two-stage lateral overflow integration capacitor (LOFIC) and voltage domain memory bank with high-density Si trench capacitors were introduced for WDR and for GS. The developed sxCMOS achieved maximum 21.9 Me- full well capacity with a single exposure 129 dB dynamic range by GS operation. Over 70% quantum efficiency (QE) toward soft X-ray was successfully achieved. The developed prototype sxCMOS is a step forward toward a 4 M pixel detector system to be utilized in next-generation synchrotron radiation facilities and X-ray free-electron lasers.

Original language	English
Article number	9378940
Pages (from-to)	2056-2063
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	68
Issue number	4
DOIs	https://doi.org/10.1109/TED.2021.3062576
Publication status	Published - 2021 Apr

Keywords

Backside-illuminated (BSI)
CMOS image sensor (CIS)
coherent X-ray diffraction imaging (CDI)
global shutter (GS)
lateral overflow integration capacitor (LOFIC)
soft X-ray
wide dynamic range (WDR)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2021.3062576

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Shike, H., Kuroda, R., Kobayashi, R., Murata, M., Fujihara, Y., Suzuki, M., Harada, S., Shibaguchi, T., Kuriyama, N., Hatsui, T., Miyawaki, J., Harada, T., Yamasaki, Y., Watanabe, T., Harada, Y., & Sugawa, S. (2021). A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor with Backside-Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank. IEEE Transactions on Electron Devices, 68(4), 2056-2063. [9378940]. https://doi.org/10.1109/TED.2021.3062576

A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor with Backside-Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank. / Shike, Hiroya; Kuroda, Rihito; Kobayashi, Ryota et al.
In: IEEE Transactions on Electron Devices, Vol. 68, No. 4, 9378940, 04.2021, p. 2056-2063.

Research output: Contribution to journal › Article › peer-review

Shike, H, Kuroda, R, Kobayashi, R, Murata, M, Fujihara, Y, Suzuki, M, Harada, S, Shibaguchi, T, Kuriyama, N, Hatsui, T, Miyawaki, J, Harada, T, Yamasaki, Y, Watanabe, T, Harada, Y & Sugawa, S 2021, 'A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor with Backside-Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank', IEEE Transactions on Electron Devices, vol. 68, no. 4, 9378940, pp. 2056-2063. https://doi.org/10.1109/TED.2021.3062576

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abstract = "This article presents a prototype 22.4~mu text{m} pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with a 45-mu text{m} thick Si substrate were introduced for low noise and high radiation hardness to high energy photons. Two-stage lateral overflow integration capacitor (LOFIC) and voltage domain memory bank with high-density Si trench capacitors were introduced for WDR and for GS. The developed sxCMOS achieved maximum 21.9 Me- full well capacity with a single exposure 129 dB dynamic range by GS operation. Over 70% quantum efficiency (QE) toward soft X-ray was successfully achieved. The developed prototype sxCMOS is a step forward toward a 4 M pixel detector system to be utilized in next-generation synchrotron radiation facilities and X-ray free-electron lasers. ",

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AU - Harada, Shoma

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AU - Hatsui, Takaki

AU - Miyawaki, Jun

AU - Harada, Tetsuo

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AU - Watanabe, Takeo

AU - Harada, Yoshihisa

AU - Sugawa, Shigetoshi

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A Global Shutter Wide Dynamic Range Soft X-Ray CMOS Image Sensor with Backside-Illuminated Pinned Photodiode, Two-Stage Lateral Overflow Integration Capacitor, and Voltage Domain Memory Bank

Abstract

Keywords

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