A high efficient, low power, and compact charge pump by vertical MOSFETs

Koji Sakui; Tetsuo Endoh

doi:10.1016/j.sse.2010.05.016

A high efficient, low power, and compact charge pump by vertical MOSFETs

Koji Sakui, Tetsuo Endoh

ENG - Electrical Engineering

Tohoku University

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

This paper examines the impact on the charge pump performance by utilizing the merit of the back-bias effect free for the vertical MOSFETs. The simulation results show that the charge pump circuits composed of the vertical MOSFETs can both shrink the charge pump area and lower the power consumption by more than 90% in comparison with the conventional charge pump circuits composed of the planar MOSFETs.

Original language	English
Pages (from-to)	1192-1196
Number of pages	5
Journal	Solid-State Electronics
Volume	54
Issue number	10
DOIs	https://doi.org/10.1016/j.sse.2010.05.016
Publication status	Published - 2010 Oct

Keywords

Back-bias effect
Charge pump
MOSFET
Pillar
Vertical

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10.1016/j.sse.2010.05.016

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title = "A high efficient, low power, and compact charge pump by vertical MOSFETs",

abstract = "This paper examines the impact on the charge pump performance by utilizing the merit of the back-bias effect free for the vertical MOSFETs. The simulation results show that the charge pump circuits composed of the vertical MOSFETs can both shrink the charge pump area and lower the power consumption by more than 90% in comparison with the conventional charge pump circuits composed of the planar MOSFETs.",

keywords = "Back-bias effect, Charge pump, MOSFET, Pillar, Vertical",

author = "Koji Sakui and Tetsuo Endoh",

note = "Funding Information: This work has been supported in part by a grant from “Research of Innovative Material and Process for Creation of Next-generation Electronics Devices” of CREST of the Japan Science and Technology Agency (JST). ",

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AU - Sakui, Koji

AU - Endoh, Tetsuo

N1 - Funding Information: This work has been supported in part by a grant from “Research of Innovative Material and Process for Creation of Next-generation Electronics Devices” of CREST of the Japan Science and Technology Agency (JST).

PY - 2010/10

Y1 - 2010/10

N2 - This paper examines the impact on the charge pump performance by utilizing the merit of the back-bias effect free for the vertical MOSFETs. The simulation results show that the charge pump circuits composed of the vertical MOSFETs can both shrink the charge pump area and lower the power consumption by more than 90% in comparison with the conventional charge pump circuits composed of the planar MOSFETs.

AB - This paper examines the impact on the charge pump performance by utilizing the merit of the back-bias effect free for the vertical MOSFETs. The simulation results show that the charge pump circuits composed of the vertical MOSFETs can both shrink the charge pump area and lower the power consumption by more than 90% in comparison with the conventional charge pump circuits composed of the planar MOSFETs.

KW - Back-bias effect

KW - Charge pump

KW - MOSFET

KW - Pillar

KW - Vertical

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VL - 54

SP - 1192

EP - 1196

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 10

ER -

A high efficient, low power, and compact charge pump by vertical MOSFETs

Abstract

Keywords

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