@inproceedings{908be9dafea744f5a2e0fbdc68d6c4b0,
title = "A high-endurance 96-Kbit FeRAM embedded in a smart card LSI using Ir/IrO2/PZT(MOCVD)/Ir ferroelectric capacitors",
abstract = "We have developed a logic-embedded 96-Kbit FeRAM macro that has low-voltage operation and high-endurance features for smart card applications. The smart card LSI was fabricated using a 0.35 μm-standard CMOS process with 3-level metallization and CMVP ferroelectric capacitors. The operation of the chip was confirmed at voltages from 2.7 to 5.5 V with 2.5 MHz clock cycle. By using Ir-based top and bottom electrodes, the fatigue endurance of the FeRAM was improved, which was confimed in burn-in tests. No failed bits were observed at accelerated conditions with 5.5 V and 150°C after 108 fatigue cycles.",
author = "H. Mori and N. Tanabe and A. Seike and H. Takeuchi and J. Yamada and T. Miwa and H. Koike and Y. Maejima and T. Tatsumi and S. Kobayashi and T. Nakura and H. Sugiyama and N. Kasai and T. Hase and H. Hada and H. Toyoshima",
note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 ; Conference date: 22-10-2001 Through 25-10-2001",
year = "2001",
doi = "10.1109/ICSICT.2001.981454",
language = "English",
series = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "195--199",
editor = "Hiroshi Iwai and Paul Yu and Bing-Zong Li and Guo-Ping Ru and Xin-Ping Qu",
booktitle = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",
address = "United States",
}