Abstract
In this paper, a high performance current latch sense amplifier (CLSA) with vertical MOSFET is proposed, and its performances are investigated. The proposed CLSA with the vertical MOSFET realizes a 11% faster sensing time with about 3% smaller current consumption relative to the conventional CLSA with the planar MOSFET. Moreover, the proposed CLSA with the vertical MOSFET achieves an 1.11 dB increased voltage gain G(f) relative to the conventional CLSA with the planar MOSFET. Furthermore, the proposed CLSA realizes up to about 1.7% larger yield than the conventional CLSA, and its circuit area is 42% smaller than the conventional CLSA.
| Original language | English |
|---|---|
| Pages (from-to) | 655-662 |
| Number of pages | 8 |
| Journal | IEICE Transactions on Electronics |
| Volume | E96-C |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2013 May |
Keywords
- Circuit area
- Current
- Current latch sense amplifier
- Sensing time
- Speed
- SRAM
- Stability
- Vertical MOSFET
- Voltage gain
- Yield