A high-sensitivity active magnetic probe using CMOS integrated circuits technology

Satoshi Aoyama; Shoji Kawahito; Takeshi Yasui; Masahiro Yamaguchi

doi:10.1109/EPEP.2005.1563712

A high-sensitivity active magnetic probe using CMOS integrated circuits technology

Satoshi Aoyama, Shoji Kawahito, Takeshi Yasui, Masahiro Yamaguchi

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

18 Citations (Scopus)

Abstract

A novel magnetic probe has been designed and fabricated in CMOS-SOI technology. Testing results show, for the first time, the effectiveness of the active magnetic probe with on-chip amplification, electric field suppression, and electrical switching.

Original language	English
Title of host publication	14th Topical Meeting on Electrical Performance of Electronic Packaging 2005
Pages	103-106
Number of pages	4
DOIs	https://doi.org/10.1109/EPEP.2005.1563712
Publication status	Published - 2005
Event	14th Topical Meeting on Electrical Performance of Electronic Packaging 2005 - Austin, TX, United States Duration: 2005 Oct 24 → 2005 Oct 26

Publication series

Name	IEEE Topical Meeting on Electrical Performance of Electronic Packaging
Volume	2005

Conference

Conference	14th Topical Meeting on Electrical Performance of Electronic Packaging 2005
Country/Territory	United States
City	Austin, TX
Period	05/10/24 → 05/10/26

Keywords

Active magnetic probe
CMOS-SOI
Near field measurement

Access to Document

10.1109/EPEP.2005.1563712

Cite this

Aoyama, S., Kawahito, S., Yasui, T., & Yamaguchi, M. (2005). A high-sensitivity active magnetic probe using CMOS integrated circuits technology. In 14th Topical Meeting on Electrical Performance of Electronic Packaging 2005 (pp. 103-106). Article 1563712 (IEEE Topical Meeting on Electrical Performance of Electronic Packaging; Vol. 2005). https://doi.org/10.1109/EPEP.2005.1563712

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title = "A high-sensitivity active magnetic probe using CMOS integrated circuits technology",

abstract = "A novel magnetic probe has been designed and fabricated in CMOS-SOI technology. Testing results show, for the first time, the effectiveness of the active magnetic probe with on-chip amplification, electric field suppression, and electrical switching.",

keywords = "Active magnetic probe, CMOS-SOI, Near field measurement",

author = "Satoshi Aoyama and Shoji Kawahito and Takeshi Yasui and Masahiro Yamaguchi",

year = "2005",

doi = "10.1109/EPEP.2005.1563712",

language = "English",

isbn = "0780392205",

series = "IEEE Topical Meeting on Electrical Performance of Electronic Packaging",

pages = "103--106",

booktitle = "14th Topical Meeting on Electrical Performance of Electronic Packaging 2005",

note = "14th Topical Meeting on Electrical Performance of Electronic Packaging 2005 ; Conference date: 24-10-2005 Through 26-10-2005",

}

Aoyama, S, Kawahito, S, Yasui, T & Yamaguchi, M 2005, A high-sensitivity active magnetic probe using CMOS integrated circuits technology. in 14th Topical Meeting on Electrical Performance of Electronic Packaging 2005., 1563712, IEEE Topical Meeting on Electrical Performance of Electronic Packaging, vol. 2005, pp. 103-106, 14th Topical Meeting on Electrical Performance of Electronic Packaging 2005, Austin, TX, United States, 05/10/24. https://doi.org/10.1109/EPEP.2005.1563712

A high-sensitivity active magnetic probe using CMOS integrated circuits technology. / Aoyama, Satoshi; Kawahito, Shoji; Yasui, Takeshi et al.
14th Topical Meeting on Electrical Performance of Electronic Packaging 2005. 2005. p. 103-106 1563712 (IEEE Topical Meeting on Electrical Performance of Electronic Packaging; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A high-sensitivity active magnetic probe using CMOS integrated circuits technology

AU - Aoyama, Satoshi

AU - Kawahito, Shoji

AU - Yasui, Takeshi

AU - Yamaguchi, Masahiro

PY - 2005

Y1 - 2005

N2 - A novel magnetic probe has been designed and fabricated in CMOS-SOI technology. Testing results show, for the first time, the effectiveness of the active magnetic probe with on-chip amplification, electric field suppression, and electrical switching.

AB - A novel magnetic probe has been designed and fabricated in CMOS-SOI technology. Testing results show, for the first time, the effectiveness of the active magnetic probe with on-chip amplification, electric field suppression, and electrical switching.

KW - Active magnetic probe

KW - CMOS-SOI

KW - Near field measurement

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U2 - 10.1109/EPEP.2005.1563712

DO - 10.1109/EPEP.2005.1563712

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T3 - IEEE Topical Meeting on Electrical Performance of Electronic Packaging

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BT - 14th Topical Meeting on Electrical Performance of Electronic Packaging 2005

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Y2 - 24 October 2005 through 26 October 2005

ER -

A high-sensitivity active magnetic probe using CMOS integrated circuits technology

Abstract

Publication series

Conference

Keywords

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