A highly reliable barrier dielectric for Cu/SiOC interconnects from Trimethylvinylsilane

K. Endo, N. Morita, T. Usami, K. Ohto, H. Miyamoto

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


Low-k SiC and SiCN etch-stop and Cu barrier dielectrics with a dielectric constant as low as 4.0 was successfully integrated into 90-nm-node Cu and low-k SiOC interconnect technology. The new dielectrics were grown by using a new precursor Trimethylvinylsilane. The performance of the dielectrics was evaluated in terms of electrical, mechanical and thermal properties. The results indicate that the new dielectrics are strong candidates for reducing the effective dielectric constant of 90-nm-node interconnect and beyond with high reliability and without significant changes.

Original languageEnglish
Pages (from-to)415-419
Number of pages5
JournalAdvanced Metallization Conference (AMC)
Publication statusPublished - 2003
EventAdvanced Metallization Conference 2003, AMC 2003 - Montreal, Que., Canada
Duration: 2003 Oct 212003 Oct 23


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