TY - JOUR
T1 - A highly reliable barrier dielectric for Cu/SiOC interconnects from Trimethylvinylsilane
AU - Endo, K.
AU - Morita, N.
AU - Usami, T.
AU - Ohto, K.
AU - Miyamoto, H.
PY - 2003
Y1 - 2003
N2 - Low-k SiC and SiCN etch-stop and Cu barrier dielectrics with a dielectric constant as low as 4.0 was successfully integrated into 90-nm-node Cu and low-k SiOC interconnect technology. The new dielectrics were grown by using a new precursor Trimethylvinylsilane. The performance of the dielectrics was evaluated in terms of electrical, mechanical and thermal properties. The results indicate that the new dielectrics are strong candidates for reducing the effective dielectric constant of 90-nm-node interconnect and beyond with high reliability and without significant changes.
AB - Low-k SiC and SiCN etch-stop and Cu barrier dielectrics with a dielectric constant as low as 4.0 was successfully integrated into 90-nm-node Cu and low-k SiOC interconnect technology. The new dielectrics were grown by using a new precursor Trimethylvinylsilane. The performance of the dielectrics was evaluated in terms of electrical, mechanical and thermal properties. The results indicate that the new dielectrics are strong candidates for reducing the effective dielectric constant of 90-nm-node interconnect and beyond with high reliability and without significant changes.
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M3 - Conference article
AN - SCOPUS:23844538126
SN - 1540-1766
SP - 415
EP - 419
JO - Advanced Metallization Conference (AMC)
JF - Advanced Metallization Conference (AMC)
T2 - Advanced Metallization Conference 2003, AMC 2003
Y2 - 21 October 2003 through 23 October 2003
ER -