A Josephson field effect transistor using an InAs-inserted-channel In 0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

Tatsushi Akazaki; Hideaki Takayanagi; Junsaku Nitta; Takatomo Enoki

doi:10.1063/1.116704

A Josephson field effect transistor using an InAs-inserted-channel In _0.52Al_0.48As/In_0.53Ga_0.47As inverted modulation-doped structure

Tatsushi Akazaki, Hideaki Takayanagi, Junsaku Nitta, Takatomo Enoki

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

A Josephson field effect transistor (JOFET) was coupled with a two-dimensional electron gas in a strained InAs quantum well inserted into an In_0.52Al_0.48As/In_0.53Ga_0.47As inverted modulation-doped structure. The characteristics of this JOFET are much improved over previous devices by using a high electron mobility transistor (HEMT)-type gate instead of the usual metal-insulator- semiconductor (MIS)-type gate. The superconducting critical current as well as the junction normal resistance are completely controlled via a gate voltage of about -1 V; this provides voltage gain over 1 for a JOFET.

Original language	English
Number of pages	1
Journal	Applied Physics Letters
DOIs	https://doi.org/10.1063/1.116704
Publication status	Published - 1995 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.116704

Cite this

@article{c7d5d91ebe084e0cb1a09b81cc875187,

title = "A Josephson field effect transistor using an InAs-inserted-channel In 0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure",

abstract = "A Josephson field effect transistor (JOFET) was coupled with a two-dimensional electron gas in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure. The characteristics of this JOFET are much improved over previous devices by using a high electron mobility transistor (HEMT)-type gate instead of the usual metal-insulator- semiconductor (MIS)-type gate. The superconducting critical current as well as the junction normal resistance are completely controlled via a gate voltage of about -1 V; this provides voltage gain over 1 for a JOFET.",

author = "Tatsushi Akazaki and Hideaki Takayanagi and Junsaku Nitta and Takatomo Enoki",

year = "1995",

month = dec,

day = "1",

doi = "10.1063/1.116704",

language = "English",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - A Josephson field effect transistor using an InAs-inserted-channel In 0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

AU - Akazaki, Tatsushi

AU - Takayanagi, Hideaki

AU - Nitta, Junsaku

AU - Enoki, Takatomo

PY - 1995/12/1

Y1 - 1995/12/1

N2 - A Josephson field effect transistor (JOFET) was coupled with a two-dimensional electron gas in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure. The characteristics of this JOFET are much improved over previous devices by using a high electron mobility transistor (HEMT)-type gate instead of the usual metal-insulator- semiconductor (MIS)-type gate. The superconducting critical current as well as the junction normal resistance are completely controlled via a gate voltage of about -1 V; this provides voltage gain over 1 for a JOFET.

AB - A Josephson field effect transistor (JOFET) was coupled with a two-dimensional electron gas in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure. The characteristics of this JOFET are much improved over previous devices by using a high electron mobility transistor (HEMT)-type gate instead of the usual metal-insulator- semiconductor (MIS)-type gate. The superconducting critical current as well as the junction normal resistance are completely controlled via a gate voltage of about -1 V; this provides voltage gain over 1 for a JOFET.

UR - http://www.scopus.com/inward/record.url?scp=36448999578&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36448999578&partnerID=8YFLogxK

U2 - 10.1063/1.116704

DO - 10.1063/1.116704

M3 - Article

AN - SCOPUS:36448999578

SN - 0003-6951

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

A Josephson field effect transistor using an InAs-inserted-channel In _0.52Al_0.48As/In_0.53Ga_0.47As inverted modulation-doped structure

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this