A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

Tatsushi Akazaki; Hideaki Takayanagi; Junsaku Nitta; Takatomo Enoki

doi:10.1063/1.116704

A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

Tatsushi Akazaki, Hideaki Takayanagi, Junsaku Nitta, Takatomo Enoki

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

A Josephson field effect transistor (JOFET) was coupled with a two-dimensional electron gas in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure. The characteristics of this JOFET are much improved over previous devices by using a high electron mobility transistor (HEMT)-type gate instead of the usual metal-insulator- semiconductor (MIS)-type gate. The superconducting critical current as well as the junction normal resistance are completely controlled via a gate voltage of about -1 V; this provides voltage gain over 1 for a JOFET.

Original language	English
Pages (from-to)	418-420
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	3
DOIs	https://doi.org/10.1063/1.116704
Publication status	Published - 1996
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.116704

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title = "A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure",

abstract = "A Josephson field effect transistor (JOFET) was coupled with a two-dimensional electron gas in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure. The characteristics of this JOFET are much improved over previous devices by using a high electron mobility transistor (HEMT)-type gate instead of the usual metal-insulator- semiconductor (MIS)-type gate. The superconducting critical current as well as the junction normal resistance are completely controlled via a gate voltage of about -1 V; this provides voltage gain over 1 for a JOFET.",

author = "Tatsushi Akazaki and Hideaki Takayanagi and Junsaku Nitta and Takatomo Enoki",

year = "1996",

doi = "10.1063/1.116704",

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AU - Akazaki, Tatsushi

AU - Takayanagi, Hideaki

AU - Nitta, Junsaku

AU - Enoki, Takatomo

PY - 1996

Y1 - 1996

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AB - A Josephson field effect transistor (JOFET) was coupled with a two-dimensional electron gas in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure. The characteristics of this JOFET are much improved over previous devices by using a high electron mobility transistor (HEMT)-type gate instead of the usual metal-insulator- semiconductor (MIS)-type gate. The superconducting critical current as well as the junction normal resistance are completely controlled via a gate voltage of about -1 V; this provides voltage gain over 1 for a JOFET.

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A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

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