A low-dielectric-constant Sr2Ta1-xNbx 2O7 thin film controlling the crystal orientation on an IrO2 substrate for one-transistor-type ferroelectric memory device

Ichirou Takahashi; Hiroyuki Sakurai; Atsuhiko Yamada; Kiyoshi Funaiwa; Tetsuya Goto; Masaki Hirayama; Akinobu Teramoto; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1143/JJAP.43.2194

A low-dielectric-constant Sr₂Ta_1-xNb_x ₂O₇ thin film controlling the crystal orientation on an IrO₂ substrate for one-transistor-type ferroelectric memory device

Ichirou Takahashi, Hiroyuki Sakurai, Atsuhiko Yamada, Kiyoshi Funaiwa, Tetsuya Goto, Masaki Hirayama, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi

New Industry Creation Hatchery Center (NICHe)

Tohoku University

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The compounds of the Sr₂Nb₂O (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field-effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr₂(Tai_1-xNb_x)₂O₇ (STN) film formation technology, which can be applied to a floating-gate-type ferroelectric random access memory (FFRAM), has been developed. Furthermore, a new technology that controls the orientation and the properties (a low dielectric constant and large coercive field) of STN has been developed. An MFMIS structure device with a large memory bias window (1.3V) under ± 5V operation and a long retention time (>10h) has successfully been fabricated.

Original language	English
Pages (from-to)	2194-2198
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	43
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.43.2194
Publication status	Published - 2004 Apr

Keywords

Controlling the orientation
Ferroelectric thin film
IrO
Low dielectric constant
MFMIS-FET
Plasma physical vapor deposition
Sr(Ta,Nb)O (STN)

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10.1143/JJAP.43.2194

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Takahashi, I., Sakurai, H., Yamada, A., Funaiwa, K., Goto, T., Hirayama, M., Teramoto, A., Sugawa, S., & Ohmi, T. (2004). A low-dielectric-constant Sr₂Ta_1-xNb_x ₂O₇ thin film controlling the crystal orientation on an IrO₂ substrate for one-transistor-type ferroelectric memory device. Japanese Journal of Applied Physics, 43(4 B), 2194-2198. https://doi.org/10.1143/JJAP.43.2194

@article{27e84e72c5684b70938f7dafbd5b83ba,

title = "A low-dielectric-constant Sr2Ta1-xNbx 2O7 thin film controlling the crystal orientation on an IrO2 substrate for one-transistor-type ferroelectric memory device",

abstract = "The compounds of the Sr2Nb2O (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field-effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr2(Tai1-xNbx)2O7 (STN) film formation technology, which can be applied to a floating-gate-type ferroelectric random access memory (FFRAM), has been developed. Furthermore, a new technology that controls the orientation and the properties (a low dielectric constant and large coercive field) of STN has been developed. An MFMIS structure device with a large memory bias window (1.3V) under ± 5V operation and a long retention time (>10h) has successfully been fabricated.",

keywords = "Controlling the orientation, Ferroelectric thin film, IrO, Low dielectric constant, MFMIS-FET, Plasma physical vapor deposition, Sr(Ta,Nb)O (STN)",

author = "Ichirou Takahashi and Hiroyuki Sakurai and Atsuhiko Yamada and Kiyoshi Funaiwa and Tetsuya Goto and Masaki Hirayama and Akinobu Teramoto and Shigetoshi Sugawa and Tadahiro Ohmi",

year = "2004",

month = apr,

doi = "10.1143/JJAP.43.2194",

language = "English",

volume = "43",

pages = "2194--2198",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

Takahashi, I, Sakurai, H, Yamada, A, Funaiwa, K, Goto, T, Hirayama, M, Teramoto, A, Sugawa, S & Ohmi, T 2004, 'A low-dielectric-constant Sr₂Ta_1-xNb_x ₂O₇ thin film controlling the crystal orientation on an IrO₂ substrate for one-transistor-type ferroelectric memory device', Japanese Journal of Applied Physics, vol. 43, no. 4 B, pp. 2194-2198. https://doi.org/10.1143/JJAP.43.2194

A low-dielectric-constant Sr₂Ta_1-xNb_x ₂O₇ thin film controlling the crystal orientation on an IrO₂ substrate for one-transistor-type ferroelectric memory device. / Takahashi, Ichirou; Sakurai, Hiroyuki; Yamada, Atsuhiko et al.
In: Japanese Journal of Applied Physics, Vol. 43, No. 4 B, 04.2004, p. 2194-2198.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A low-dielectric-constant Sr2Ta1-xNbx 2O7 thin film controlling the crystal orientation on an IrO2 substrate for one-transistor-type ferroelectric memory device

AU - Takahashi, Ichirou

AU - Sakurai, Hiroyuki

AU - Yamada, Atsuhiko

AU - Funaiwa, Kiyoshi

AU - Goto, Tetsuya

AU - Hirayama, Masaki

AU - Teramoto, Akinobu

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

PY - 2004/4

Y1 - 2004/4

N2 - The compounds of the Sr2Nb2O (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field-effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr2(Tai1-xNbx)2O7 (STN) film formation technology, which can be applied to a floating-gate-type ferroelectric random access memory (FFRAM), has been developed. Furthermore, a new technology that controls the orientation and the properties (a low dielectric constant and large coercive field) of STN has been developed. An MFMIS structure device with a large memory bias window (1.3V) under ± 5V operation and a long retention time (>10h) has successfully been fabricated.

AB - The compounds of the Sr2Nb2O (SNO) family are suitable for use as ferroelectric materials for ferroelectric memory field-effect transistors (FETs), because these substances have a low dielectric constant and high heat-resistance. A very low dielectric constant ferroelectric Sr2(Tai1-xNbx)2O7 (STN) film formation technology, which can be applied to a floating-gate-type ferroelectric random access memory (FFRAM), has been developed. Furthermore, a new technology that controls the orientation and the properties (a low dielectric constant and large coercive field) of STN has been developed. An MFMIS structure device with a large memory bias window (1.3V) under ± 5V operation and a long retention time (>10h) has successfully been fabricated.

KW - Controlling the orientation

KW - Ferroelectric thin film

KW - IrO

KW - Low dielectric constant

KW - MFMIS-FET

KW - Plasma physical vapor deposition

KW - Sr(Ta,Nb)O (STN)

UR - http://www.scopus.com/inward/record.url?scp=3142577186&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142577186&partnerID=8YFLogxK

U2 - 10.1143/JJAP.43.2194

DO - 10.1143/JJAP.43.2194

M3 - Article

AN - SCOPUS:3142577186

SN - 0021-4922

VL - 43

SP - 2194

EP - 2198

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 B

ER -

A low-dielectric-constant Sr₂Ta_1-xNb_x ₂O₇ thin film controlling the crystal orientation on an IrO₂ substrate for one-transistor-type ferroelectric memory device

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