A low-temperature and highly reproducible fabrication process for high-mobility solution-processed small molecule field-effect transistors

T. Endo; T. Nagase; T. Kobayashi; K. Takimiya; M. Ikeda; H. Naito

A low-temperature and highly reproducible fabrication process for high-mobility solution-processed small molecule field-effect transistors

T. Endo, T. Nagase, T. Kobayashi, K. Takimiya, M. Ikeda, H. Naito

Research output: Contribution to conference › Paper › peer-review

Abstract

A simple, low-temperature, and reproducible fabrication process of dioctylbenzothienobenzothiophene top-gate field-effect transistors has been reported. A total of 116 devices exhibit high mobilities of 1.59±0.40 cm²/Vs, low threshold voltages of -1.48±3.02 V, and excellent electrical stability against a 10⁴-s-duration gate-bias stress of -1.2 MV/cm.

Original language	English
Pages	2235-2238
Number of pages	4
Publication status	Published - 2010 Dec 1
Externally published	Yes
Event	17th International Display Workshops, IDW'10 - Fukuoka, Japan Duration: 2010 Dec 1 → 2010 Dec 3

Other

Other	17th International Display Workshops, IDW'10
Country/Territory	Japan
City	Fukuoka
Period	10/12/1 → 10/12/3

ASJC Scopus subject areas

Computer Vision and Pattern Recognition
Human-Computer Interaction

Cite this

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title = "A low-temperature and highly reproducible fabrication process for high-mobility solution-processed small molecule field-effect transistors",

abstract = "A simple, low-temperature, and reproducible fabrication process of dioctylbenzothienobenzothiophene top-gate field-effect transistors has been reported. A total of 116 devices exhibit high mobilities of 1.59±0.40 cm2/Vs, low threshold voltages of -1.48±3.02 V, and excellent electrical stability against a 104-s-duration gate-bias stress of -1.2 MV/cm.",

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year = "2010",

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T1 - A low-temperature and highly reproducible fabrication process for high-mobility solution-processed small molecule field-effect transistors

AU - Endo, T.

AU - Nagase, T.

AU - Kobayashi, T.

AU - Takimiya, K.

AU - Ikeda, M.

AU - Naito, H.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - A simple, low-temperature, and reproducible fabrication process of dioctylbenzothienobenzothiophene top-gate field-effect transistors has been reported. A total of 116 devices exhibit high mobilities of 1.59±0.40 cm2/Vs, low threshold voltages of -1.48±3.02 V, and excellent electrical stability against a 104-s-duration gate-bias stress of -1.2 MV/cm.

AB - A simple, low-temperature, and reproducible fabrication process of dioctylbenzothienobenzothiophene top-gate field-effect transistors has been reported. A total of 116 devices exhibit high mobilities of 1.59±0.40 cm2/Vs, low threshold voltages of -1.48±3.02 V, and excellent electrical stability against a 104-s-duration gate-bias stress of -1.2 MV/cm.

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M3 - Paper

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T2 - 17th International Display Workshops, IDW'10

Y2 - 1 December 2010 through 3 December 2010

ER -

A low-temperature and highly reproducible fabrication process for high-mobility solution-processed small molecule field-effect transistors

Abstract

Other

ASJC Scopus subject areas

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