A low-temperature dehydration method of silica films

T. Fukumura, S. Sugahara, M. Matsumura

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


XeF2 has been proposed as a catalyst for low-temperature dehydration of SiO2 films. The critical dehydration temperature was about 200°C less XeF2 dehydration-annealing than for vacuum dehydration-annealing. The SiO2 film deposited from tetraethylorthosilicate (TEOS) and ozone at 270°C showed OH-free and good insulating characteristics after XeF2-annealing at 400°C.

Original languageEnglish
Pages (from-to)L46-L48
JournalJapanese Journal of Applied Physics
Issue number1 A/B
Publication statusPublished - 2001 Jan 15


  • Dehydration
  • Insulating thin film
  • Low-temperature processing
  • Silicon dioxide
  • SiO
  • XeF


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