Abstract
We present a method for quantitative measurement of electrical conductivity of semiconductor wafers in a contactless fashion by using millimeter-waves. A focusing sensor was used to focus a 110 GHz millimeter-wave beam on the surface of a silicon wafer. The amplitude and the phase of the reflection coefficient of the millimeter-wave signal were measured by which electrical conductivity of the wafer was determined quantitatively, independent of the permittivity and thickness of the wafers. The conductivity obtained by this method agrees well with that measured by the conventional four-point-probe method.
| Original language | English |
|---|---|
| Pages (from-to) | 41-45 |
| Number of pages | 5 |
| Journal | Key Engineering Materials |
| Volume | 270-273 |
| Issue number | I |
| DOIs | |
| Publication status | Published - 2004 |
| Event | Proceedings of the 11th Asian Pacific Conference on Nondestructive Testing - Jeju Island, Korea, Republic of Duration: 2003 Nov 3 → 2003 Nov 7 |
Keywords
- Calibration
- Conductivity
- Millimeter-wave
- Quantitative evaluation
- Silicon wafer
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering