A new 1-D conducting state stabilized by strong H-bondings in halogen-bridged metal complexes

H. Okamoto; K. Toriumi; K. Okaniwa; T. Mitani; M. Yamashita

doi:10.1016/0379-6779(91)91478-S

A new 1-D conducting state stabilized by strong H-bondings in halogen-bridged metal complexes

H. Okamoto, K. Toriumi, K. Okaniwa, T. Mitani, M. Yamashita

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20 Citations (Scopus)

Abstract

The 1-D bromo-bridged Ni complex with strongly enhanced 2-D H-bond network has the Mott-Hubbard-type electronic state, in which the electron-electron repulsive energy is responsible for gap-opening. In spite of the large optical gap (ca. 1.3 eV), the conductivity is fairly high (ca. 0.2 S/cm at R. T.) suggesting the presence of low energy carriers induced by the 1-D charge density instability. The possibility of the phase transition from the Peierls system to the Mott-Hubbard system has been checked by the hydrostatic-pressure effect on Raman scattering of the bromo-bridged Pd complex.

Original language	English
Pages (from-to)	2791-2794
Number of pages	4
Journal	Synthetic Metals
Volume	42
Issue number	3
DOIs	https://doi.org/10.1016/0379-6779(91)91478-S
Publication status	Published - 1991 May 29
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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abstract = "The 1-D bromo-bridged Ni complex with strongly enhanced 2-D H-bond network has the Mott-Hubbard-type electronic state, in which the electron-electron repulsive energy is responsible for gap-opening. In spite of the large optical gap (ca. 1.3 eV), the conductivity is fairly high (ca. 0.2 S/cm at R. T.) suggesting the presence of low energy carriers induced by the 1-D charge density instability. The possibility of the phase transition from the Peierls system to the Mott-Hubbard system has been checked by the hydrostatic-pressure effect on Raman scattering of the bromo-bridged Pd complex.",

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AU - Okamoto, H.

AU - Toriumi, K.

AU - Okaniwa, K.

AU - Mitani, T.

AU - Yamashita, M.

PY - 1991/5/29

Y1 - 1991/5/29

N2 - The 1-D bromo-bridged Ni complex with strongly enhanced 2-D H-bond network has the Mott-Hubbard-type electronic state, in which the electron-electron repulsive energy is responsible for gap-opening. In spite of the large optical gap (ca. 1.3 eV), the conductivity is fairly high (ca. 0.2 S/cm at R. T.) suggesting the presence of low energy carriers induced by the 1-D charge density instability. The possibility of the phase transition from the Peierls system to the Mott-Hubbard system has been checked by the hydrostatic-pressure effect on Raman scattering of the bromo-bridged Pd complex.

AB - The 1-D bromo-bridged Ni complex with strongly enhanced 2-D H-bond network has the Mott-Hubbard-type electronic state, in which the electron-electron repulsive energy is responsible for gap-opening. In spite of the large optical gap (ca. 1.3 eV), the conductivity is fairly high (ca. 0.2 S/cm at R. T.) suggesting the presence of low energy carriers induced by the 1-D charge density instability. The possibility of the phase transition from the Peierls system to the Mott-Hubbard system has been checked by the hydrostatic-pressure effect on Raman scattering of the bromo-bridged Pd complex.

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A new 1-D conducting state stabilized by strong H-bondings in halogen-bridged metal complexes

Abstract

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