Abstract
In this paper, a new calculation method of the atomic flux divergence used to predict the formation of electromigration-induced void is proposed by considering two-dimensional distributions of current density and temperature and also simply considering the line structure of not only polycrystalline, but also bamboo line. For the verification, electromigration phenomenon near the corner of an angled polycrystalline line, which results in two-dimensional distributions of current density and temperature, is treated as an example. The usefulness of the proposed method is discussed in the light of the comparison of prediction of void formation near the corner with the experimental result.
Original language | English |
---|---|
Pages (from-to) | 360-366 |
Number of pages | 7 |
Journal | Journal of Electronic Packaging, Transactions of the ASME |
Volume | 120 |
Issue number | 4 |
DOIs | |
Publication status | Published - 1998 Dec |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Mechanics of Materials
- Computer Science Applications
- Electrical and Electronic Engineering