TY - GEN
T1 - A new approach to realize high performance RF power FETs on Si(110) surface
AU - Cheng, Weitao
AU - Teramoto, Akinobu
AU - Ohmi, Tadahiro
PY - 2008/9/29
Y1 - 2008/9/29
N2 - Silicon-on-insulator (SOI) LDMOS has been considered the promising technology for radio-frequency (RF) power FETs because of its merits of high power efficiency, low standby power, outclassing RF characteristics using high resistivity base substrate and so on [1-2]. However, it is very important to improve the current drivability and suppress the flicker noise in the MOSFETs to realize the high performance RF power devices [3]. It has been reported that the hole mobility on Si(110) surface is much larger than that on Si(100) [4] and indicates the possibility for improving the CMOS performance. This experimental study reports the new approach to realize a very high performance RF power FETs on Si(110) surfaces using accumulation-mode (AM) SOI device structure with very large current drivability and very low noise level. We demonstrate that this high-speed and low-noise novel balanced CMOS device obviously improves the inverter, ring oscillator circuit performance.
AB - Silicon-on-insulator (SOI) LDMOS has been considered the promising technology for radio-frequency (RF) power FETs because of its merits of high power efficiency, low standby power, outclassing RF characteristics using high resistivity base substrate and so on [1-2]. However, it is very important to improve the current drivability and suppress the flicker noise in the MOSFETs to realize the high performance RF power devices [3]. It has been reported that the hole mobility on Si(110) surface is much larger than that on Si(100) [4] and indicates the possibility for improving the CMOS performance. This experimental study reports the new approach to realize a very high performance RF power FETs on Si(110) surfaces using accumulation-mode (AM) SOI device structure with very large current drivability and very low noise level. We demonstrate that this high-speed and low-noise novel balanced CMOS device obviously improves the inverter, ring oscillator circuit performance.
UR - http://www.scopus.com/inward/record.url?scp=52349106883&partnerID=8YFLogxK
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U2 - 10.1109/PESC.2008.4592556
DO - 10.1109/PESC.2008.4592556
M3 - Conference contribution
AN - SCOPUS:52349106883
SN - 9781424416684
T3 - PESC Record - IEEE Annual Power Electronics Specialists Conference
SP - 3854
EP - 3856
BT - PESC '08 - 39th IEEE Annual Power Electronics Specialists Conference - Proceedings
T2 - PESC '08 - 39th IEEE Annual Power Electronics Specialists Conference
Y2 - 15 June 2008 through 19 June 2008
ER -