A new approach to ZnCdSe quantum dots

B. P. Zhang; T. Yasuda; W. X. Wang; Y. Segawa; K. Edamatsu; T. Itoh; H. Yaguchi; K. Onabe

doi:10.1016/S0921-5107(97)00245-6

A new approach to ZnCdSe quantum dots

B. P. Zhang, T. Yasuda, W. X. Wang, Y. Segawa, K. Edamatsu, T. Itoh, H. Yaguchi, K. Onabe

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Abstract

We propose a new approach of fabricating ZnCdSe quantum dots (QDs) on ZnSe and GaAs (110) surfaces by simply depositing a ZnSe/ZnCdSe/ZnSe heterostructure. The growth conditions are selected to introduce surface roughness on the over grown ZnSe which allows the formation of ZnCdSe QDs. Optical studies unambiguously demonstrate the formation of QDs. Resolution-limited sharp emission lines are observed by micro-photoluminescences and the linewidths are much less than the thermal energy. As time goes on, intermittent behaviors of the QD emissions are observed. A proper selection of growth conditions is essential in obtaining ZnCdSe QDs by this method, especially on GaAs (110) surfaces.

Original language	English
Pages (from-to)	127-131
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	51
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(97)00245-6
Publication status	Published - 1998 Feb 27

Keywords

Micro-photoluminescence
Quantum dot
ZnCdSe

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10.1016/S0921-5107(97)00245-6

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title = "A new approach to ZnCdSe quantum dots",

abstract = "We propose a new approach of fabricating ZnCdSe quantum dots (QDs) on ZnSe and GaAs (110) surfaces by simply depositing a ZnSe/ZnCdSe/ZnSe heterostructure. The growth conditions are selected to introduce surface roughness on the over grown ZnSe which allows the formation of ZnCdSe QDs. Optical studies unambiguously demonstrate the formation of QDs. Resolution-limited sharp emission lines are observed by micro-photoluminescences and the linewidths are much less than the thermal energy. As time goes on, intermittent behaviors of the QD emissions are observed. A proper selection of growth conditions is essential in obtaining ZnCdSe QDs by this method, especially on GaAs (110) surfaces.",

keywords = "Micro-photoluminescence, Quantum dot, ZnCdSe",

author = "Zhang, {B. P.} and T. Yasuda and Wang, {W. X.} and Y. Segawa and K. Edamatsu and T. Itoh and H. Yaguchi and K. Onabe",

note = "Funding Information: One of the authors, Zhang, was supported by the Special Postdoctoral Research Program of RIKEN. This work was supported in part by The Ministry of Education, Science, Sports and Culture of Japan through a Grant-in-Aid for Encouragement of Young Scientists (No. 08750028).",

year = "1998",

month = feb,

day = "27",

doi = "10.1016/S0921-5107(97)00245-6",

language = "English",

volume = "51",

pages = "127--131",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

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TY - JOUR

T1 - A new approach to ZnCdSe quantum dots

AU - Zhang, B. P.

AU - Yasuda, T.

AU - Wang, W. X.

AU - Segawa, Y.

AU - Edamatsu, K.

AU - Itoh, T.

AU - Yaguchi, H.

AU - Onabe, K.

N1 - Funding Information: One of the authors, Zhang, was supported by the Special Postdoctoral Research Program of RIKEN. This work was supported in part by The Ministry of Education, Science, Sports and Culture of Japan through a Grant-in-Aid for Encouragement of Young Scientists (No. 08750028).

PY - 1998/2/27

Y1 - 1998/2/27

N2 - We propose a new approach of fabricating ZnCdSe quantum dots (QDs) on ZnSe and GaAs (110) surfaces by simply depositing a ZnSe/ZnCdSe/ZnSe heterostructure. The growth conditions are selected to introduce surface roughness on the over grown ZnSe which allows the formation of ZnCdSe QDs. Optical studies unambiguously demonstrate the formation of QDs. Resolution-limited sharp emission lines are observed by micro-photoluminescences and the linewidths are much less than the thermal energy. As time goes on, intermittent behaviors of the QD emissions are observed. A proper selection of growth conditions is essential in obtaining ZnCdSe QDs by this method, especially on GaAs (110) surfaces.

AB - We propose a new approach of fabricating ZnCdSe quantum dots (QDs) on ZnSe and GaAs (110) surfaces by simply depositing a ZnSe/ZnCdSe/ZnSe heterostructure. The growth conditions are selected to introduce surface roughness on the over grown ZnSe which allows the formation of ZnCdSe QDs. Optical studies unambiguously demonstrate the formation of QDs. Resolution-limited sharp emission lines are observed by micro-photoluminescences and the linewidths are much less than the thermal energy. As time goes on, intermittent behaviors of the QD emissions are observed. A proper selection of growth conditions is essential in obtaining ZnCdSe QDs by this method, especially on GaAs (110) surfaces.

KW - Micro-photoluminescence

KW - Quantum dot

KW - ZnCdSe

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U2 - 10.1016/S0921-5107(97)00245-6

DO - 10.1016/S0921-5107(97)00245-6

M3 - Article

AN - SCOPUS:0031997271

SN - 0921-5107

VL - 51

SP - 127

EP - 131

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

ER -

A new approach to ZnCdSe quantum dots

Abstract

Keywords

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