A new class of ferromagnetic semiconductors and quantum heterostructures

Le Duc Anh, Kosuke Takiguchi, Takahiro Chiba, Masaaki Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

To integrate ferromagnetism and topological properties into mainstream semiconductors is highly challenging but potentially useful for new ultralow-power electronics and topological quantum computing. By doping Fe in narrow-gap III-V semiconductors such as InAs, GaSb and InSb using molecular beam epitaxy (MBE), we realized a new class of N-type and P-type ferromagnetic semiconductors (FMSs) with high Curie temperature (TC > 300 K) for the first time. Furthermore, heterostructures of these new Fe-doped FMSs exhibit various new phenomena such as giant proximity magnetoresistance and odd-parity magnetoresistance, all induced by a long-range magnetic proximity effect. These results suggest that the Fe-doped III-V FMSs are promising materials for high-performance spintronic devices.

Original languageEnglish
Title of host publication2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350338362
DOIs
Publication statusPublished - 2023
Event2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Sendai, Japan
Duration: 2023 May 152023 May 19

Publication series

Name2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings

Conference

Conference2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023
Country/TerritoryJapan
CitySendai
Period23/5/1523/5/19

Keywords

  • Magnetic Materials
  • Molecular Beam Epitaxy
  • Quantum Effects.
  • Spintronics

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