Abstract
The fabrication technique of highly ordered anodic porous alumina membrane by anodization of Al and the obtained membrane as a mask to the fabrication of 100 run period antireflection grating hole are described. The two-step anodizing process improves the quality of the nanohole because the periodic seeds are generated by the first anodization. Antireflection grating structures are fabricated by using ordered anodic porous alumina mask and etched by SF 6 fast atom beam on silicon wafer. The reflectivity of the antireflection grating structures is measured and compared with that of the calculated value and the polished silicon surface.
Original language | English |
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Pages (from-to) | 272-274 |
Number of pages | 3 |
Journal | Microsystem Technologies |
Volume | 10 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2004 May |
Keywords
- Anodic porous alumina
- Fast atom beam etching
- Mask