@article{69b28536c309459eba96c582bdd01f14,
title = "A New Silicon Phase with Direct Band Gap and Novel Optoelectronic Properties",
abstract = "Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (∼10 4 cm/V · s) at room temperature and a low mass density (1.71 g/cm 3), making it a promising material for optoelectronic applications.",
author = "Yaguang Guo and Qian Wang and Yoshiyuki Kawazoe and Puru Jena",
note = "Funding Information: This work is partially supported by grants from the National Natural Science Foundation of China (NSFC-51471004, NSFC-11174014), the National Grand Fundamental Research 973 Program of China (Grant No. 2012CB921404), and the Doctoral Program of Higher Education of China (20130001110033). P.J. acknowledges support by the U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering under Award # DE-FG02-96ER45579. Y.K. acknowledges support by the Russian Megagrant Project No. 14.B25.31.0030 “New energy technologies and energy carriers”. The authors thank the crew of the Center for Computational Materials Science, the Institute for Materials Research, Tohoku University (Japan), for their continuous support of the HITACHI SR11000 supercomputing facility.",
year = "2015",
month = sep,
day = "23",
doi = "10.1038/srep14342",
language = "English",
volume = "5",
journal = "Scientific Reports",
issn = "2045-2322",
publisher = "Nature Publishing Group",
}