A novel approach for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of gallium and mercury metals

M. Ogita; M. Nakao; C. D. Singh; I. Mogi; S. Awaji

doi:10.1016/j.physb.2004.01.095

A novel approach for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of gallium and mercury metals

M. Ogita, M. Nakao, C. D. Singh, I. Mogi, S. Awaji

Shizuoka University

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

An AC-DC method has been proposed for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of Ga and Hg metals. In low magnetic field Hall signal in solid state is proportional to magnetic field B, while in liquid state Hall signal is affected by magnetoresistance effect. It has been found that magnetoresistance has a B ² dependence on magnetic field and affects the Hall signal. In high magnetic field, the Hall effect in liquid state is affected by a very large magnetoresistance effect compared in solid state. The magnetoresistance effect in liquid state is higher than solid state.

Original language	English
Pages (from-to)	306-309
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	346-347
Issue number	1-4
DOIs	https://doi.org/10.1016/j.physb.2004.01.095
Publication status	Published - 2004 Apr 30
Event	Proceedings of the 7th International Symposium on Research - Toulouse, France Duration: 2003 Jul 20 → 2003 Jul 23

Keywords

Hall effect
Liquid state
Magnetoresistance
Simultaneous
Solid state

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10.1016/j.physb.2004.01.095

Cite this

@article{4223ff46cb5d4772bc5eebb88610356a,

title = "A novel approach for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of gallium and mercury metals",

abstract = "An AC-DC method has been proposed for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of Ga and Hg metals. In low magnetic field Hall signal in solid state is proportional to magnetic field B, while in liquid state Hall signal is affected by magnetoresistance effect. It has been found that magnetoresistance has a B 2 dependence on magnetic field and affects the Hall signal. In high magnetic field, the Hall effect in liquid state is affected by a very large magnetoresistance effect compared in solid state. The magnetoresistance effect in liquid state is higher than solid state.",

keywords = "Hall effect, Liquid state, Magnetoresistance, Simultaneous, Solid state",

author = "M. Ogita and M. Nakao and Singh, {C. D.} and I. Mogi and S. Awaji",

year = "2004",

month = apr,

day = "30",

doi = "10.1016/j.physb.2004.01.095",

language = "English",

volume = "346-347",

pages = "306--309",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

number = "1-4",

note = "Proceedings of the 7th International Symposium on Research ; Conference date: 20-07-2003 Through 23-07-2003",

}

TY - JOUR

T1 - A novel approach for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of gallium and mercury metals

AU - Ogita, M.

AU - Nakao, M.

AU - Singh, C. D.

AU - Mogi, I.

AU - Awaji, S.

PY - 2004/4/30

Y1 - 2004/4/30

N2 - An AC-DC method has been proposed for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of Ga and Hg metals. In low magnetic field Hall signal in solid state is proportional to magnetic field B, while in liquid state Hall signal is affected by magnetoresistance effect. It has been found that magnetoresistance has a B 2 dependence on magnetic field and affects the Hall signal. In high magnetic field, the Hall effect in liquid state is affected by a very large magnetoresistance effect compared in solid state. The magnetoresistance effect in liquid state is higher than solid state.

AB - An AC-DC method has been proposed for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of Ga and Hg metals. In low magnetic field Hall signal in solid state is proportional to magnetic field B, while in liquid state Hall signal is affected by magnetoresistance effect. It has been found that magnetoresistance has a B 2 dependence on magnetic field and affects the Hall signal. In high magnetic field, the Hall effect in liquid state is affected by a very large magnetoresistance effect compared in solid state. The magnetoresistance effect in liquid state is higher than solid state.

KW - Hall effect

KW - Liquid state

KW - Magnetoresistance

KW - Simultaneous

KW - Solid state

UR - http://www.scopus.com/inward/record.url?scp=2042447104&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2042447104&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2004.01.095

DO - 10.1016/j.physb.2004.01.095

M3 - Conference article

AN - SCOPUS:2042447104

SN - 0921-4526

VL - 346-347

SP - 306

EP - 309

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

T2 - Proceedings of the 7th International Symposium on Research

Y2 - 20 July 2003 through 23 July 2003

ER -

A novel approach for simultaneous measurements of Hall effect and magnetoresistance effect in solid and liquid state of gallium and mercury metals

Abstract

Keywords

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