Abstract
A novel delayed flip-flop circuit using monostable-bistable transition logic elements (MOBILEs) was proposed, and was fabricated using resonant-tunneling-diode/high-electron-mobility-transistor integration technology on an InP substrate. Error free operations at up to 12.5 Gb/s were demonstrated at room temperature.
Original language | English |
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Pages (from-to) | L212-L213 |
Journal | Japanese Journal of Applied Physics |
Volume | 37 |
Issue number | 2 SUPPL. B |
DOIs | |
Publication status | Published - 1998 Feb 15 |
Keywords
- Delayed flip-flop
- HEMT
- InAlAs
- InGaAs
- InP
- Resonant tunneling diode