A novel material for laser diodes of optical fiber communication

Fang Wang, Wei Zhang, Yu Huai Liu, Shou Yi Yang, Yuan Tao Zhang, Katayama Ryuji, Takashi Matsuoka

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The conventional material for the optical fiber communication laser diode is based on InGaAsP, which might be substituted by a potential candidate, InGaAlN. The new active region material, InN, is introduced regarding to its crystal growth and characterization, including the structural, optical and electrical properties. This material is promising for providing good performance of temperature stability of the wavelength. In addition, it is environmentally friendly.

Original languageEnglish
Title of host publicationOptoelectronics Engineering and Information Technologies in Industry
Pages45-49
Number of pages5
DOIs
Publication statusPublished - 2013
Event2nd International Conference on Opto-Electronics Engineering and Materials Research, OEMR 2013 - Zhengzhou, Henan, China
Duration: 2013 Oct 192013 Oct 20

Publication series

NameAdvanced Materials Research
Volume760-762
ISSN (Print)1022-6680

Conference

Conference2nd International Conference on Opto-Electronics Engineering and Materials Research, OEMR 2013
Country/TerritoryChina
CityZhengzhou, Henan
Period13/10/1913/10/20

Keywords

  • InGaAlN
  • InN
  • Laser diode
  • Pressurized reactor

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