A novel memory test system with an electromagnet for STT-MRAM testing

R. Tamura; N. Watanabe; H. Koike; H. Sato; S. Ikeda; T. Endoh; S. Sato

doi:10.1109/NVMTS47818.2019.8986200

A novel memory test system with an electromagnet for STT-MRAM testing

R. Tamura, N. Watanabe, H. Koike, H. Sato, S. Ikeda, T. Endoh, S. Sato

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We have successfully developed, for the first time, a new memory test system for STT-MRAM at wafer-level where an electromagnet is combined with a memory test system and a 300 mm wafer prober. In the developed memory test system, an out-of-plane magnetic field up to ±800 mT can be applied on 10x10 mm² in the 300 mm wafer with distribution of less than 2.5%. We demonstrated that the electromagnet can apply large enough magnetic field to evaluate magnetic immunity properties for STT-MRAM using 2Mb STT-MRAM; magnetic field dependence of pass-bit rate for ″0″/ ″1″ states, read/write shmoo, and ″0″/ ″1″ retention. All the properties can be explained by general theory for STT-MRAM. The developed memory test system with the electromagnet is a key testing tool for STT-MRAMs, which will contribute to increase efficiency of STT-MRAM testing as well as widening the application area of STT-MRAM sensitive to an external magnetic field.

Original language	English
Title of host publication	NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728144313
DOIs	https://doi.org/10.1109/NVMTS47818.2019.8986200
Publication status	Published - 2019 Oct
Event	19th Non-Volatile Memory Technology Symposium, NVMTS 2019 - Durham, United States Duration: 2019 Oct 28 → 2019 Oct 30

Publication series

Name	NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019

Conference

Conference	19th Non-Volatile Memory Technology Symposium, NVMTS 2019
Country/Territory	United States
City	Durham
Period	19/10/28 → 19/10/30

Keywords

auto-prober
electromagnet
memory test system
retention
shmoo plot
STT-MRAM

Access to Document

10.1109/NVMTS47818.2019.8986200

Cite this

Tamura, R., Watanabe, N., Koike, H., Sato, H., Ikeda, S., Endoh, T., & Sato, S. (2019). A novel memory test system with an electromagnet for STT-MRAM testing. In NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019 Article 8986200 (NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NVMTS47818.2019.8986200

@inproceedings{9bc0efab1a1547c38a24de25cf20cfb6,

title = "A novel memory test system with an electromagnet for STT-MRAM testing",

abstract = "We have successfully developed, for the first time, a new memory test system for STT-MRAM at wafer-level where an electromagnet is combined with a memory test system and a 300 mm wafer prober. In the developed memory test system, an out-of-plane magnetic field up to ±800 mT can be applied on 10x10 mm2 in the 300 mm wafer with distribution of less than 2.5%. We demonstrated that the electromagnet can apply large enough magnetic field to evaluate magnetic immunity properties for STT-MRAM using 2Mb STT-MRAM; magnetic field dependence of pass-bit rate for ″0″/ ″1″ states, read/write shmoo, and ″0″/ ″1″ retention. All the properties can be explained by general theory for STT-MRAM. The developed memory test system with the electromagnet is a key testing tool for STT-MRAMs, which will contribute to increase efficiency of STT-MRAM testing as well as widening the application area of STT-MRAM sensitive to an external magnetic field.",

keywords = "auto-prober, electromagnet, memory test system, retention, shmoo plot, STT-MRAM",

author = "R. Tamura and N. Watanabe and H. Koike and H. Sato and S. Ikeda and T. Endoh and S. Sato",

note = "Funding Information: ACKNOWLEDGMENTS This work was in part supported by STT-MRAM R&D program under Industry-Academic collaboration of CIES consortium and JST-OPERA (Program Grant Number JPMJOP1611). The authors thank M. Takahashi from Tokyo Seimitsu co., ltd and H. Kiyofuji from Micronics JAPAN co., ltd. Publisher Copyright: {\textcopyright} 2019 IEEE.; 19th Non-Volatile Memory Technology Symposium, NVMTS 2019 ; Conference date: 28-10-2019 Through 30-10-2019",

year = "2019",

month = oct,

doi = "10.1109/NVMTS47818.2019.8986200",

language = "English",

series = "NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019",

address = "United States",

}

Tamura, R, Watanabe, N, Koike, H, Sato, H, Ikeda, S , Endoh, T & Sato, S 2019, A novel memory test system with an electromagnet for STT-MRAM testing. in NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019., 8986200, NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019, Institute of Electrical and Electronics Engineers Inc., 19th Non-Volatile Memory Technology Symposium, NVMTS 2019, Durham, United States, 19/10/28. https://doi.org/10.1109/NVMTS47818.2019.8986200

A novel memory test system with an electromagnet for STT-MRAM testing. / Tamura, R.; Watanabe, N.; Koike, H. et al.
NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8986200 (NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A novel memory test system with an electromagnet for STT-MRAM testing

AU - Tamura, R.

AU - Watanabe, N.

AU - Koike, H.

AU - Sato, H.

AU - Ikeda, S.

AU - Endoh, T.

AU - Sato, S.

N1 - Funding Information: ACKNOWLEDGMENTS This work was in part supported by STT-MRAM R&D program under Industry-Academic collaboration of CIES consortium and JST-OPERA (Program Grant Number JPMJOP1611). The authors thank M. Takahashi from Tokyo Seimitsu co., ltd and H. Kiyofuji from Micronics JAPAN co., ltd. Publisher Copyright: © 2019 IEEE.

PY - 2019/10

Y1 - 2019/10

N2 - We have successfully developed, for the first time, a new memory test system for STT-MRAM at wafer-level where an electromagnet is combined with a memory test system and a 300 mm wafer prober. In the developed memory test system, an out-of-plane magnetic field up to ±800 mT can be applied on 10x10 mm2 in the 300 mm wafer with distribution of less than 2.5%. We demonstrated that the electromagnet can apply large enough magnetic field to evaluate magnetic immunity properties for STT-MRAM using 2Mb STT-MRAM; magnetic field dependence of pass-bit rate for ″0″/ ″1″ states, read/write shmoo, and ″0″/ ″1″ retention. All the properties can be explained by general theory for STT-MRAM. The developed memory test system with the electromagnet is a key testing tool for STT-MRAMs, which will contribute to increase efficiency of STT-MRAM testing as well as widening the application area of STT-MRAM sensitive to an external magnetic field.

AB - We have successfully developed, for the first time, a new memory test system for STT-MRAM at wafer-level where an electromagnet is combined with a memory test system and a 300 mm wafer prober. In the developed memory test system, an out-of-plane magnetic field up to ±800 mT can be applied on 10x10 mm2 in the 300 mm wafer with distribution of less than 2.5%. We demonstrated that the electromagnet can apply large enough magnetic field to evaluate magnetic immunity properties for STT-MRAM using 2Mb STT-MRAM; magnetic field dependence of pass-bit rate for ″0″/ ″1″ states, read/write shmoo, and ″0″/ ″1″ retention. All the properties can be explained by general theory for STT-MRAM. The developed memory test system with the electromagnet is a key testing tool for STT-MRAMs, which will contribute to increase efficiency of STT-MRAM testing as well as widening the application area of STT-MRAM sensitive to an external magnetic field.

KW - auto-prober

KW - electromagnet

KW - memory test system

KW - retention

KW - shmoo plot

KW - STT-MRAM

UR - http://www.scopus.com/inward/record.url?scp=85081115507&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85081115507&partnerID=8YFLogxK

U2 - 10.1109/NVMTS47818.2019.8986200

DO - 10.1109/NVMTS47818.2019.8986200

M3 - Conference contribution

AN - SCOPUS:85081115507

T3 - NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019

BT - NVMTS 2019 - Non-Volatile Memory Technology Symposium 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 19th Non-Volatile Memory Technology Symposium, NVMTS 2019

Y2 - 28 October 2019 through 30 October 2019

ER -

A novel memory test system with an electromagnet for STT-MRAM testing

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Keywords

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