TY - GEN
T1 - A novel remote reactive sink layer technique for the control of N and O concentrations in metal/high-k gate stacks
AU - Akasaka, Y.
AU - Shiraishi, K.
AU - Umezawa, N.
AU - Ogawa, O.
AU - Kasuya, T.
AU - Chikyow, T.
AU - Ootsuka, F.
AU - Nara, Y.
AU - Nakamura, K.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - A novel technique for the control of nitrogen (N) and oxygen (O) concentrations in the metal/high-k gate stacks is proposed. By inserting a reactive metal (Ti) layer remote from work function metal and high-k insulator, N and O concentration is easily decreased. This technique effectively suppresses the EOT increase after high-temperature annealing. Moreover, improved electron mobility and decreased interfacial trap density can be obtained by this technique. We demonstrated MISFET with extremely high electron mobility and thin EOT can be easily obtained even with relaxed process of HfSiON.
AB - A novel technique for the control of nitrogen (N) and oxygen (O) concentrations in the metal/high-k gate stacks is proposed. By inserting a reactive metal (Ti) layer remote from work function metal and high-k insulator, N and O concentration is easily decreased. This technique effectively suppresses the EOT increase after high-temperature annealing. Moreover, improved electron mobility and decreased interfacial trap density can be obtained by this technique. We demonstrated MISFET with extremely high electron mobility and thin EOT can be easily obtained even with relaxed process of HfSiON.
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M3 - Conference contribution
AN - SCOPUS:41149164810
SN - 1424400058
SN - 9781424400058
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - 164
EP - 165
BT - 2006 Symposium on VLSI Technology, VLSIT - Digest of Technical Papers
T2 - 2006 Symposium on VLSI Technology, VLSIT
Y2 - 13 June 2006 through 15 June 2006
ER -