Abstract
This paper describes a novel structure of NMOSFET with an elevated SiGe source/drain region and an ultra-shallow source/drain extension (SDE) region. A new ultra-shallow junction formation technology: which is based on a damage-free process to replace conventional low energy ion implantation, is realized using ultra-high-vacuum-chemica-vapor deposition (UHVCVD) and excimer laser annealing (ELA).
| Original language | English |
|---|---|
| Pages (from-to) | 82-86 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 41 |
| Issue number | 1 |
| Publication status | Published - 2002 Jul |
| Externally published | Yes |
Keywords
- Excimer laser annealing (ELA)
- Laser induced atomic layer doping (LI-ALD)
- SiGe selective epitaxial growth
- Ultra-high vacuum chemical vapor deposition (UHVCVD)
- Ultra-shallow source/drain extension (SDE)
ASJC Scopus subject areas
- Physics and Astronomy(all)