A novel substrate LaBGeO 5 lattice-matched to InN

Shintaro Miyazawa, Satoru Ichikawa, Yuhuai Liu, Shiyang Ji, Takashi Matsuoka, Hideo Nakae

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


As a novel substrate with a lattice-mismatch of only 0.8% along the a-axis to InN thin films, we propose LaBGeO 5 (LBGO) with a trigonal symmetry for the first time. A single crystal growth of LBGO by Czochralski (Cz)-pulling was investigated, and c-axis-oriented LBGO single crystals with high crystallinity were successfully grown with a pulling rate of 0.5 mm/h in O 2-atomosphere. c-axis oriented InN film was subsequently grown on the obtained LBGO {001} substrate by metalorganic vapor epitaxy (MOVPE), and it was verified that InN film on LBGO was less-strained as compared with that on {001} sapphire substrate. It is stressed to say that LBGO can be expected as a lattice-matching substrate for the epitaxial growth of InN.

Original languageEnglish
Pages (from-to)1195-1198
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number5
Publication statusPublished - 2011 May


  • InN
  • LaBGeO
  • lattice-matching
  • substrate


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