Abstract
A numerical method to simulate nanostructure formation due to electromigration in passivated Al specimens is developed based on the governing parameter for electromigration damage, AFD* gen. The nanostructure formation is influenced by conditions such as the current density and substrate temperature. The results of the simulations are verified through experiments, and good agreement between the simulations and experiments is found for changes in nanostructure volume. The simulation is expected to be useful for identifying effective conditions for nanostructure formation.
Original language | English |
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Pages (from-to) | 2201-2206 |
Number of pages | 6 |
Journal | Journal of Electronic Materials |
Volume | 38 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2009 Oct |
Keywords
- Aluminum
- Electromigration
- Grain boundary diffusion
- Nanostructure
- Simulation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry