TY - JOUR
T1 - A Partially Etched Structure of Light-Addressable Potentiometric Sensor for High-Spatial-Resolution and High-Speed Chemical Imaging
AU - Truong, Hoang Anh
AU - Werner, Carl Frederik
AU - Miyamoto, Ko ichiro
AU - Yoshinobu, Tatsuo
N1 - Funding Information:
The authors appreciate the financial support of the Japan Science Society. H. A. Truong is grateful to NEC C&C Foundation for supporting the travel expense to attend EnFI 2017 conference.
Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/8/8
Y1 - 2018/8/8
N2 - In this study, a partially etched structure of a light-addressable potentiometric sensor (LAPS) is fabricated for high-spatial-resolution and high-speed imaging of chemical species. An anisotropic etching process based on tetramethylammonium hydroxide (TMAH) is optimized to fabricate the structure, which strikes a balance between the imaging performance and the mechanical strength of the sensor plate. The etched region of the sensor plate with a thickness of 47 µm yields a 12-fold enhancement of the photocurrent signal at a high frequency of 120 kHz and a 10-fold frequency bandwidth in comparison with the frame region with a thickness of 150 µm due to the reduced traveling distance of charge carriers inside the semiconductor. This result represents a new approach for high signal-to-noise ratio, high-spatial-resolution, and high-speed measurement.
AB - In this study, a partially etched structure of a light-addressable potentiometric sensor (LAPS) is fabricated for high-spatial-resolution and high-speed imaging of chemical species. An anisotropic etching process based on tetramethylammonium hydroxide (TMAH) is optimized to fabricate the structure, which strikes a balance between the imaging performance and the mechanical strength of the sensor plate. The etched region of the sensor plate with a thickness of 47 µm yields a 12-fold enhancement of the photocurrent signal at a high frequency of 120 kHz and a 10-fold frequency bandwidth in comparison with the frame region with a thickness of 150 µm due to the reduced traveling distance of charge carriers inside the semiconductor. This result represents a new approach for high signal-to-noise ratio, high-spatial-resolution, and high-speed measurement.
KW - light-addressable potentiometric sensors
KW - partially etched structure
KW - spatial resolution
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U2 - 10.1002/pssa.201700964
DO - 10.1002/pssa.201700964
M3 - Article
AN - SCOPUS:85044275033
SN - 1862-6300
VL - 215
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 15
M1 - 1700964
ER -