A pixel-shared CMOS image sensor using lateral overflow gate

Shin Sakai; Yoshiaki Tashiro; Nana Akahane; Rihito Kuroda; Koichi Mizobuchi; Shigetoshi Sugawa

doi:10.1109/ESSCIRC.2009.5326026

A pixel-shared CMOS image sensor using lateral overflow gate

Shin Sakai, Yoshiaki Tashiro, Nana Akahane, Rihito Kuroda, Koichi Mizobuchi, Shigetoshi Sugawa

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Citations (Scopus)

Abstract

A lateral overflow integration capacitor (LOFIC) based CMOS image sensor sharing two pixels and without row-select transistors has been developed using a newly added lateral overflow gate which directly connects the photodiode and the LOFIC. A 0.18-μm, 2-Poly 3-Metal CMOS technology with a buried pinned photodiode process was employed for the fabrication of the CMOS image sensor having 1/3.3-inch optical format, 1280^H × 960^V pixels, and RGB Bayer color filter and on-chip micro-lens on each pixel. The fabricated CMOS image sensor exhibits a high conversion gain of 84-μV/e ^- and a high full well capacity of 6.9 × 10⁴-e ^- in spite of its pixel size of 3.0 × 3.0-μm².

Original language	English
Title of host publication	ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference
Pages	240-243
Number of pages	4
DOIs	https://doi.org/10.1109/ESSCIRC.2009.5326026
Publication status	Published - 2009
Event	35th European Solid-State Circuits Conference, ESSCIRC 2009 - Athens, Greece Duration: 2009 Sept 14 → 2009 Sept 18

Publication series

Name	ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference

Conference

Conference	35th European Solid-State Circuits Conference, ESSCIRC 2009
Country/Territory	Greece
City	Athens
Period	09/9/14 → 09/9/18

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10.1109/ESSCIRC.2009.5326026

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Sakai, S., Tashiro, Y., Akahane, N., Kuroda, R., Mizobuchi, K., & Sugawa, S. (2009). A pixel-shared CMOS image sensor using lateral overflow gate. In ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference (pp. 240-243). Article 5326026 (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2009.5326026

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title = "A pixel-shared CMOS image sensor using lateral overflow gate",

abstract = "A lateral overflow integration capacitor (LOFIC) based CMOS image sensor sharing two pixels and without row-select transistors has been developed using a newly added lateral overflow gate which directly connects the photodiode and the LOFIC. A 0.18-μm, 2-Poly 3-Metal CMOS technology with a buried pinned photodiode process was employed for the fabrication of the CMOS image sensor having 1/3.3-inch optical format, 1280H × 960V pixels, and RGB Bayer color filter and on-chip micro-lens on each pixel. The fabricated CMOS image sensor exhibits a high conversion gain of 84-μV/e - and a high full well capacity of 6.9 × 104-e - in spite of its pixel size of 3.0 × 3.0-μm2.",

author = "Shin Sakai and Yoshiaki Tashiro and Nana Akahane and Rihito Kuroda and Koichi Mizobuchi and Shigetoshi Sugawa",

year = "2009",

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note = "35th European Solid-State Circuits Conference, ESSCIRC 2009 ; Conference date: 14-09-2009 Through 18-09-2009",

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Sakai, S, Tashiro, Y, Akahane, N, Kuroda, R, Mizobuchi, K & Sugawa, S 2009, A pixel-shared CMOS image sensor using lateral overflow gate. in ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference., 5326026, ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference, pp. 240-243, 35th European Solid-State Circuits Conference, ESSCIRC 2009, Athens, Greece, 09/9/14. https://doi.org/10.1109/ESSCIRC.2009.5326026

A pixel-shared CMOS image sensor using lateral overflow gate. / Sakai, Shin; Tashiro, Yoshiaki; Akahane, Nana et al.
ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference. 2009. p. 240-243 5326026 (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Sugawa, Shigetoshi

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N2 - A lateral overflow integration capacitor (LOFIC) based CMOS image sensor sharing two pixels and without row-select transistors has been developed using a newly added lateral overflow gate which directly connects the photodiode and the LOFIC. A 0.18-μm, 2-Poly 3-Metal CMOS technology with a buried pinned photodiode process was employed for the fabrication of the CMOS image sensor having 1/3.3-inch optical format, 1280H × 960V pixels, and RGB Bayer color filter and on-chip micro-lens on each pixel. The fabricated CMOS image sensor exhibits a high conversion gain of 84-μV/e - and a high full well capacity of 6.9 × 104-e - in spite of its pixel size of 3.0 × 3.0-μm2.

AB - A lateral overflow integration capacitor (LOFIC) based CMOS image sensor sharing two pixels and without row-select transistors has been developed using a newly added lateral overflow gate which directly connects the photodiode and the LOFIC. A 0.18-μm, 2-Poly 3-Metal CMOS technology with a buried pinned photodiode process was employed for the fabrication of the CMOS image sensor having 1/3.3-inch optical format, 1280H × 960V pixels, and RGB Bayer color filter and on-chip micro-lens on each pixel. The fabricated CMOS image sensor exhibits a high conversion gain of 84-μV/e - and a high full well capacity of 6.9 × 104-e - in spite of its pixel size of 3.0 × 3.0-μm2.

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A pixel-shared CMOS image sensor using lateral overflow gate

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